2.3-kV β-Ga2O3 heterojunction barrier Schottky diode with Cu anode and robust thermal reliability

Abstract

β-Ga2O3 power diodes inherently face challenges in balancing forward conduction loss and reverse blocking capability. To address this limitation, we developed a high-performance Cu2O/β-Ga2O3 heterojunction barrier Schottky (JBS) diode deploying a low work function copper (Cu) anode. The device simultaneously achieves a low turn-on voltage of 0.83 V, a breakdown voltage of 2345 V, and a power figure-of-merit of 1.22 GW/cm2. Additionally, temperature-dependent measurements confirm that the Pt/Cu2O structure enhances the barrier height and suppresses the reverse saturation current, further improving breakdown performance. Under a 200 V reverse stress at 425 K for 104 s, the JBS diode exhibits only a 1.316-fold increase in dynamic on-resistance and a 10.76% degradation in turn-on voltage, highlighting excellent long-term thermal and electrical reliability. These findings suggest a promising strategy for β-Ga2O3-based power electronics with superior performance and reliability.