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regionalpcs improve discovery of DNA methylation associations with complex traits
Spatiotemporal patterns in active four-state Potts models
Lignin alkali regulated interfacial polymerization towards ultra-selective and highly permeable nanofiltration membrane
Study on the foam production characteristics of air self-suction foam generator by jet
Entropy engineering activation of UiO-66 for boosting catalytic transfer hydrogenation
Biparametric MRI-based radiomics for noninvastive discrimination of benign prostatic hyperplasia nodules (BPH) and prostate cancer nodules: a bio-centric retrospective cohort study
Cryo-EM structure and oligomerization of the human planar cell polarity core protein Vangl1
Faces of different socio-cultural identities impact emotional meaning learning for L2 words
Mechanistic evaluation of enhanced graphene toxicity to Bacillus induced by humic acid adsorption
Optimizing solar performance of CFTSe-based solar cells using MoSe2 as an innovative buffer layers
AbstractIn this study, we explore the photovoltaic performance of an innovative high efficiency heterostructure utilizing the quaternary semiconductor Cu2FeSnSe4 (CFTSe). This material features a kesterite symmetrical structure and is distinguished by its non-toxic nature and abundant presence in the earth’s crust. Utilizing the SCAPS simulator, we explore various electrical specifications such as short circuit current (Jsc), open circuit voltage (Voc), the fill factor (FF), and power conversion efficiency (PCE) were explored at a large range of thicknesses, and the acceptor carrier concentration doping (NA). Our results demonstrate that optimized parameters yield a remarkable PCE of 26.47%, accompanied by a Voc of 1.194 V, Jsc of 35.37 mA/cm2, and FF of 62.65% at a CFTSe absorber thickness of 0.5 μm. Furthermore, the performance of the photovoltaic cell is assessed for the defect levels in the CFTSe absorber and MoSe2 buffer layers. Results indicate that deep defect levels above 1 × 1017 cm− 3 lead to a decrease in Jsc. The study also investigates the effect of operating temperature on cell performance within the 300–500 K range. A notable decline in Voc is observed, likely due to an increase in saturation current, suggesting an interaction between temperature and cell behavior. In this work, we propose a practical CFTSe-based structure that replaces conventional buffer layers, such as CdS, with MoSe2 TMDC as a promising alternative buffer layer, paving the way for more sustainable solar technology.
Therapy-induced senescent cancer cells contribute to cancer progression by promoting ribophorin 1-dependent PD-L1 upregulation
Association between alcohol consumption and risk of type 2 diabetes in Japan: a population-base longitudinal cohort study
Macrophage STING signaling promotes fibrosis in benign airway stenosis via an IL6-STAT3 pathway
User satisfaction and dissatisfaction with assistive technology devices and services in India
Variation in a single allele drives divergent yield responses to elevated CO2 between rice subspecies
hsa-mir-483-3p modulates delayed breast cancer recurrence
Double resonance spectroscopy reveals structure and dynamics near transition states
Broadband terahertz holography using isotropic VO2 metasurfaces
Cu- or Ag-containing Bi-Sb-Te for in-line roll-to-roll patterned thin-film thermoelectrics
AbstractThe Selective Metallization Technique shows promise for roll-to-roll in-line patterning of flexible electronics using evaporated metals, but challenges arise when applied to sputtering functional materials. This study overcomes these challenges with simultaneous sputtering of Bi-Sb-Te and evaporation of metal (Ag or Cu) for thermoelectric layers when using Selective Metallization Technique. Large-scale manufacturing is demonstrated through roll-to-roll processing of a 0.8 m wide polymer web at 25 m/min, achieving high-throughput production of functional thin-film patterns with nanometer thickness. The room-temperature-deposited material system exhibits significantly enhanced thermoelectric performance and facilitates an n-type-to-p-type transition in the Cu- or Ag-containing Bi-Sb-Te-based composite film. Here, we show that while applying Selective Metallization Technique, the evaporation of metal modifies the impact of residual oil on Bi-Sb-Te, which can be effectively removed with a few seconds of plasma exposure, and the fabricated thermoelectric devices are validated in wearable applications utilizing a coiled-up wristband design.