Time-resolved non-contact THz diagnostics of impurity state in different sulfur-implanted/laser-annealed silicon samples
Abstract
An optical pump/terahertz probe method was utilized to evaluate the active impurity concentration and structural state in the sulfur-implanted (1018–1021 cm−3) surface layers of the crystalline silicon wafer, both in the as-implanted and nanosecond-laser annealed states. This method enabled, for the first time, non-contact electrical measurements of carrier scattering and recombination rates even in the implantation-disordered, poorly conducting hyperdoped Si samples. These measurements enabled the direct comparison of their active impurity content vs the concentration of implanted sulfur and its laser-annealing activation from the cluster form, indicating sulfur precipitation down to the equilibrium solubility limit in the as-implanted samples at the high impurity concentrations of 1020–1021 cm−3. These studies revealed the advanced potential modalities of the versatile optical pump/terahertz probe method for the unbiased non-contact acquisition of key electrical parameters in poorly conducting materials.
Article Details
Journal Info
The Journal of Chemical Physics
American Institute of Physics
Authors (13)
Sergey I. Kudryashov
Ivan M. Podlesnykh
Lebedev Physical Institute, Russian Academy of Sciences 2 , 53 Leninsky Prospect, 119991 Moscow,
Valery A. Dravin
Lebedev Physical Institute, Russian Academy of Sciences 2 , 53 Leninsky Prospect, 119991 Moscow,
Michael S. Kovalev
Bauman Moscow State Technical University 1 , 5/1 2nd Baumanskaya Str., 105005 Moscow,
Pavel A. Chizhov
Prokhorov General Physics Institute of the Russian Academy of Sciences 3 , 38 Vavilova Str., 119991 Moscow,
Vladislava V. Bulgakova
Prokhorov General Physics Institute of the Russian Academy of Sciences 3 , 38 Vavilova Str., 119991 Moscow,
Alexander A. Ushakov
Prokhorov General Physics Institute of the Russian Academy of Sciences 3 , 38 Vavilova Str., 119991 Moscow,
Yury G. Goncharov
Prokhorov General Physics Institute of the Russian Academy of Sciences 3 , 38 Vavilova Str., 119991 Moscow,
George K. Krasin
Lebedev Physical Institute, Russian Academy of Sciences 2 , 53 Leninsky Prospect, 119991 Moscow,
Evgeny V. Kuzmin
Lebedev Physical Institute, Russian Academy of Sciences 2 , 53 Leninsky Prospect, 119991 Moscow,
Anastasiya G. Bondarenko
Lebedev Physical Institute, Russian Academy of Sciences 2 , 53 Leninsky Prospect, 119991 Moscow,
Pavel A. Maslov
Moscow Institute of Physics and Technology 4 , 9 Institutskiy per., 141701 Dolgoprudny, Moscow Region,
Nikita D. Orekhov
Emerging Technologies Research Center, XPANCEO