p-GaN source integrated GaN/AlGaN/GaN double heterojunction field-effect transistor (FET) for next-generation electronic applications
M
Mohit Kumar
T
Timothée Labau
L
Laurent Xu
J
Joelle Zgheib
R
René Escoffier
J
Julien Buckley
Article Details
Journal
Scientific Reports
Volume / Issue
Vol. 15, Issue 1
Published
October 21, 2025
ISSN
2045-2322
Publisher
Nature Portfolio
Authors (6)
M
Mohit Kumar
T
Timothée Labau
L
Laurent Xu
J
Joelle Zgheib
R
René Escoffier
J
Julien Buckley
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