Mohit Kumar, Timothée Labau, Laurent Xu, Joelle Zgheib, René Escoffier, Julien Buckley. "p-GaN source integrated GaN/AlGaN/GaN double heterojunction field-effect transistor (FET) for next-generation electronic applications." Scientific Reports (2025). https://doi.org/10.1038/s41598-025-20675-6