Oxygen-controlled IGZO channel deposition for enhanced memory window in ferroelectric FETs
H
He Young Kang
S
Seung Hee Cha
Y
Yong Jun Jeong
G
Gwang-Bok Kim
D
Da Eun Kim
J
Jae Kyeong Jeong
Article Details
Journal
Scientific Reports
Volume / Issue
Vol. 16, Issue 1
Published
March 18, 2026
ISSN
2045-2322
Publisher
Nature Portfolio
Authors (6)
H
He Young Kang
S
Seung Hee Cha
Y
Yong Jun Jeong
G
Gwang-Bok Kim
D
Da Eun Kim
J
Jae Kyeong Jeong
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