Kang, H. Y., Cha, S. H., Jeong, Y. J., Kim, G., Kim, D. E., Jeong, J. K. (2026). ​​​Oxy​gen-controlled IGZO channel deposition for enhanced memory window in ferroelectric FETs. Scientific Reports. https://doi.org/10.1038/s41598-026-43896-9