In‐situ p‐Doping of Nanometer Tellurium‐based Oxide for Room‐Temperature CMOS Circuits

Abstract

ABSTRACT The development of high‐performance p ‐type oxide semiconductors is crucial for scalable CMOS technologies, yet conventional oxides remain intrinsically difficult to p‐dope owing to the localized nature of oxygen orbitals and strong defect compensation. Here, we report a reaction‐metal‐mediated redox strategy that exploits the deposition environment for intrinsic in situ p ‐type doping of tellurium oxide. Mo‐assisted reduction produces nanometer Te‐based oxide films with tunable Te nanochannels, which form percolative pathways that markedly enhance hole transport. Remarkably, films deposited at room temperature (RT) achieve mobilities above 10 cm 2 V −1 s −1 and carrier densities tunable over more than five orders of magnitude. Co‐integration with n ‐type oxide transistors enables the fabrication of all‐oxide CMOS circuits entirely at RT with robust logic functionality. This intrinsically regulated doping pathway provides a generalizable route to overcome long‐standing bottlenecks in p ‐type oxides and advance oxide semiconductors toward large‐area, flexible CMOS electronics.