He, M., Choi, H., Le, Z., Yang, X., Huang, Y., Reo, Y., Bai, S., Wang, M., Zhu, H., Noh, Y., Liu, A. (2026). In‐situ p‐Doping of Nanometer Tellurium‐based Oxide for Room‐Temperature CMOS Circuits. Advanced Materials. https://doi.org/10.1002/adma.72813