Atomically confined insertion for 2D strain and polarization engineered GaN electronics
Y
Yuanhong Shi
Z
Zilong Dong
J
Jiangwen Wang
D
Di Guo
W
Wanpeng Li
W
Wei Sha
Z
Zekun Li
(Department of Chemistry)
Z
Zhen Yang
J
Jizhou Zhang
J
Jitao Liu
T
Te Xu
W
Weiguo Hu
Z
Zhong Lin Wang
(Center for High-Entropy Energy and Systems)
J
Junyi Zhai
Article Details
Journal
Nature Communications
Volume / Issue
Vol. 17, Issue 1
Published
June 11, 2026
ISSN
2041-1723
Publisher
Nature Portfolio
Authors (14)
Y
Yuanhong Shi
Z
Zilong Dong
J
Jiangwen Wang
D
Di Guo
W
Wanpeng Li
W
Wei Sha
Z
Zekun Li
Department of Chemistry
Z
Zhen Yang
J
Jizhou Zhang
J
Jitao Liu
T
Te Xu
W
Weiguo Hu
Z
Zhong Lin Wang
Center for High-Entropy Energy and Systems
J
Junyi Zhai
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