Shi, Y., Dong, Z., Wang, J., Guo, D., Li, W., Sha, W., Li, Z., Yang, Z., Zhang, J., Liu, J., Xu, T., Hu, W., Wang, Z. L., Zhai, J. (2026). Atomically confined insertion for 2D strain and polarization engineered GaN electronics. Nature Communications. https://doi.org/10.1038/s41467-026-74233-3