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Artificial intelligence-enhanced diagnosis of degenerative joint disease using temporomandibular joint panoramic radiography and joint noise data

Manipulation of field-effect transistors by flexoelectric effect

Flexoelectric field-effect transistors (FE-FETs) hold significant potential for applications in biomedical and healthcare sensing fields. While existing piezoelectric FETs sense physiological signals based on pressure or compressive strain, movements such as bending of the elbow or knee joints are more common in physiological activities than external pressure. To address this, this study innovatively introduces FE-FETs that are regulated through the flexoelectric effect induced by bending. In this study, MoS2 with flexoelectric properties is utilized as the channel region. By bending the FE-FETs, the flexoelectric effect is induced, generating a flexoelectric response voltage that alters the Schottky barrier. The results confirm that varying the bending angle of the FE-FETs effectively modulates their transconductance and carrier mobility. Remarkably, the combination of traditional gate voltage and the flexoelectric effect results in a maximum carrier mobility of 49.63 cm2/V · s within a drain voltage range of 0–1 V, which is approximately 10.6 times higher than the carrier mobility of 4.68 cm2/V·s under traditional gate voltage alone. This study provides an effective approach to regulating FE-FETs and expands the possibilities for their application in wearable technology.

The prognostic value of the platelet-to-lymphocyte ratio in multiple myeloma patients treated with a bortezomib-based regimen

Enhanced performance and long-term stability of 2D photodetectors through hexagonal boron nitride encapsulation

Two-dimensional (2D) semiconductor materials, such as molybdenum disulfide (MoS2), demonstrate considerable potential for optoelectronic applications, largely due to their atomic thickness, tunable bandgap, and capacity for heterostructure integration. Nevertheless, the development of 2D photodetectors that can achieve high responsivity, a fast response time, and long-term stability remains a significant challenge. The present study is a systematic investigation of the effects of top and bottom encapsulation with hexagonal boron nitride (h-BN) on the performance and stability of 2D photodetectors. By employing a dry transfer process to fabricate a high-quality h-BN/MoS2/h-BN structure, we provide effective protection against environmental degradation. The encapsulated devices exhibited a responsivity increase of one to two orders of magnitude under 532 nm laser illumination, in comparison to those without encapsulation. Additionally, the rise and decay times were markedly reduced, by approximately two orders of magnitude, from 0.538 and 3.43 ms to 23.1 and 99.6 μs, respectively. Moreover, the devices demonstrated sustained performance over a 60-day storage period, with response times remaining faster than pre-encapsulation levels. This study highlights the potential of h-BN encapsulation for enhancing both the performance and stability of 2D photodetectors, advancing the development of more reliable optoelectronic devices.

Fine tuning enzyme activity assays for monitoring the enzymatic hydrolysis of PET

Impurity-induced step pinning and recovery in MOVPE-grown (100) β-Ga2O3 film

This study focuses on the impact of high-doping impurities (>1018 cm−3) on the morphology of homoepitaxially grown (100) 4° off β-Ga2O3 film, as well as incorporating insights from the Cabrera–Vermilyea model (C–V model). Using atomic force microscopy imaging, we reveal that under low-supersaturation conditions, dopant-induced impurities lead to irregular step formation and growth stalling, inducing the step-bunching formation consistent with C–V model predictions. Conversely, higher supersaturation conditions restore desired step-flow morphology, resembling low-impurity growth states. It is also shown that the step-bunching formed under lower supersaturation conditions and high-impurity concentration might induce unwanted structural defects and compensate the free carriers. These findings underscore the delicate interplay between dopant concentrations, growth morphology, and supersaturation in metalorganic vapor phase epitaxy-grown (100) β-Ga2O3 films, providing a comprehensive understanding of optimizing their electrical properties with respect to power electronics applications.

Health risk assessment via ingestion of disinfection by-products in drinking water

Impact of a RbF post-deposition treatment on the chemical structure of wide-gap CuIn0.1Ga0.9Se2 thin-film solar cell absorber surfaces

A detailed characterization of the impact of a RbF post-deposition treatment (RbF-PDT) on the chemical structure of a wide-gap Cu(In, Ga)Se2 thin-film solar cell absorber surface with a high Ga/(Ga + In) (GGI) ratio of 0.9 is presented. Using synchrotron- and lab-based x-ray photoelectron spectroscopy, as well as x-ray-excited Auger electron spectroscopy, we observe distinct differences to RbF-PDT on absorber surfaces with the common GGI of ∼0.3. In particular, RbF-PDT reduces sodium and oxide content at the surface, while the copper concentration at the surface is not affected. We find no spectral evidence for the formation of a distinct Rb–In–Se surface layer. In addition, we observe that the GGI ratio at the surface is slightly decreased due to a reduction of the Ga and an increase in the In concentration, which may explain the observed improvement in the power conversion efficiency after the PDT (from 6.8% to 7.3%).

Biosynthesized ZnO NPs loaded-electrospun PVA/sodium alginate/glycine nanofibers: synthesis, spinning optimization and antimicrobial activity evaluation

Deposition of plasmonic ITO nanoparticles by near-infrared laser ablation

Compound nanoparticles (NPs) attract attention because of their unique electrical, optical, and catalytic properties. Among them, plasmonic tin-doped indium oxide (ITO) NPs are characterized by transparency in the visible wavelength range and tunable localized surface plasmon resonance (LSPR) in the near-infrared (NIR) range due to high electronic conductivity. To date, they have been usually synthesized by a chemical solution process. However, the chemically synthesized ITO NPs are capped with organic protecting agents, which often block exchange of charge carriers and access of chemical species to the NPs, limiting some applications. In the present study, we propose a method for direct deposition of ITO NPs on a glass or plastic substrate using commercially available ITO-coated glass via NIR laser ablation. The LSPR characteristics of the ITO NPs, thus, prepared were controlled by changing the ablation conditions such as laser power. In addition, the potential applications of the ITO NPs were also investigated through measurements of their refractive index sensitivity and magnetic circular dichroism.

Porous carbons with complex 3D geometries via selective laser sintering of whey powder

Abstract In addition to the inherent limitations of carbons to melt or flow, a vast majority of carbon precursors deforms during carbonisation, with stereolithography of thermoset resins being the preferred technology for 3D printing of carbons. An alternative is now presented with the possibility of using a melting-based technology, selective laser sintering (SLS), to fabricate 3D structures that withstand carbonisation. The key factor that makes this happen is whey powder, a natural, abundant and cheap by-product of the dairy industry. When heating the whey powder with a laser at 180–200 ºC for a few seconds, whey particles sinter, and 3D structures are obtained layer-by-layer. Carbonisation of the sintered whey structures brings about 3D porous carbons with excellent mechanical properties that preserve the SLS printed form albeit an isotropic shrinkage (approx. 23%). Melanoidins are identified as responsible for both the sintering and the thermoset behaviour during carbonisation of the whey powder.

Improving the performance of solar cells by optimizing the interface of SnO2/perovskite layer using sodium citrate

Interface engineering is an important means of modifying perovskite solar cells (PSCs). In this paper, a strategy for modifying the SnO2/perovskite interface transport layer using sodium citrate (SC), an organic sodium salt, was proposed. The optimal power conversion efficiency was 22.55%, 9.3% higher than that of devices without SC modification. The open circuit voltage (Voc) reaches a respectable 1.20 V. This method enhances the conductivity of thin SnO2 films with inert photocatalytic performance, improves the crystallinity of perovskite, and increases the grain size, thereby meliorating the performance and stability of PSCs.

Early life stress, kangaroo care, parenting behavior and secure attachment predict executive functioning in 2 year olds born preterm

Thermal conductivity of AlN thin films deposited by reactive DC magnetron sputtering on different substrates using ultra-fast transient hot strip technique

In the frame of this work, we report a profound insight into the thermal conductivity (k) of aluminum nitride (AlN) thin films deposited on AlN-molecular beam epitaxy (MBE)/Si(111) and AlN-Kyma/Si(111) substrates at low temperatures (<200 °C) using reactive direct current magnetron sputtering (DCMS). Our concern is not on the thermal properties at the nanoscale, but rather on relating thermal macroscopic properties to the microstructure for submicronic to micronic AlN films. As the mean free path for AlN material is about 100 nm, the thickness of our films lies between 400 nm and 2 μm. The k measurements were conducted using the ultra-fast transient hot strip technique. It was found that the k values of the deposited films change depending on both the substrate type and the film thickness. For the 500 nm AlN thick film, k value was about 250 W m−1 K−1 for AlN-DCMS films grown on 10 nm AlN-MBE/Si against 90 W m−1 K−1 for those deposited on 200 nm AlN-Kyma/Si. The thermal boundary resistance has been computed equal to (0.25 ± 0.08) × 10−9 K m2 W−1 on 10 nm AlN-MBE/Si against (3.56 ± 1.50) × 10−9 K m2 W−1 on 200 nm AlN-Kyma/Si. Additionally, both pole figures and high resolution transmission electron microscopy confirm k results. In fact, pole figures confirm the good crystal quality of the film on both substrates, but HR-TEM analyses show that the AlN films grown on 10 nm AlN-MBE/Si template exhibit good crystalline quality with an epitaxial regrowth and abrupt interface compared to those obtained for 200 nm AlN-Kyma/Si. It also appears that the thermal boundary resistance plays a major role in the thermal properties of AlN films.

Comparative effective dose of ciprofol and propofol in suppressing cardiovascular responses to tracheal intubation

Abstract Ciprofol, a novel γ-aminobutyric acid receptor agonist, outperforms propofol with minimal cardiovascular effects, higher potency, reduced injection pain, and a broader safety margin. Despite these advantages, ciprofol’s clinical research is still emerging. This study compares the median effective dose (ED 50 ) and adverse reactions of ciprofol and propofol, in conjunction with sufentanil, for suppressing cardiovascular responses during tracheal intubation. Fifty-three adult patients scheduled for tracheal intubation under general anesthesia were enrolled and randomly assigned to receive either ciprofol (Group C) or propofol (Group P), according to a random number table. Tracheal intubation was performed using a standardized laryngoscope and endotracheal tube. The Dixon’s up-and-down method was employed to determine the ED 50 and 95% effective dose (ED 95 ) of ciprofol and propofol in inhibiting cardiovascular responses during tracheal intubation. Based on the pilot study, the initial dose for ciprofol was set at 0.35 mg/kg (with a 0.01 mg/kg increment) and for propofol at 2.0 mg/kg (with a 0.1 mg/kg increment). Probit analysis was applied to derive dose-response curves, while adverse reactions were continuously monitored. A total of 54 participants were included, with 24 in group C (1 excluded) and 30 in group P. Probit analysis revealed that the ED 50 of ciprofol for inhibiting cardiovascular responses to tracheal intubation were 0.326 mg/kg (95% CI 0.304–0.337 mg/kg), and for propofol, 1.541 mg/kg (95% CI 1.481–1.599 mg/kg). The heart rate in group P was significantly higher than the group C at 1 minute ( p  = 0.026) and 3 minutes ( p  = 0.016) post-intubation. Systolic and diastolic blood pressures (SBP and DBP) decreased significantly before and after intubation compared to baseline values in both groups ( p < 0.05). Group C experienced significantly less injection pain ( p  = 0.001), although the incidence of other adverse effects was not statistically different between groups ( p > 0.05). Clinical Trial Registration : hppts://ClinicalTrials.gov; Identifier: NCT06095570(18/10/2023).

Self-powered ultraviolet position-sensitive detectors based on PrNiO3/Nb-doped SrTiO3 p–n junctions

Position-sensitive detectors based on the lateral photovoltaic effect have been widely used in optical engineering for the measurement of position, distance, and angles. However, self-powered ultraviolet position-sensitive detectors with high sensitivity and fast response are still lacking due to the difficulty associated with the fabrication of p-type wide bandgap semiconductors, which hinders their further design and enhancement. Here, the influence of band structures and interfacial transport properties on the performance of self-powered ultraviolet position-sensitive detectors based on PrNiO3/Nb:SrTiO3p–n junctions is systematically investigated. Large position sensitivity and fast relaxation time of the lateral photovoltaic effect were observed up to 400 K in the perovskite-based ultraviolet position-sensitive detectors. Hall effect measurements revealed that the transport of photoexcited carriers occurs mainly through the interface of the PrNiO3/Nb:SrTiO3 junctions, resulting in a fast response and a stable photovoltaic effect. This study presents insights and avenues for designing self-powered perovskite oxide ultraviolet position-sensitive detectors with enhanced photoelectric performance.

Nematode controlling effects and safety tests of Duddingtonia flagrans biological preparation in sheep

High mobility crystallized stacked-channel thin-film transistors induced by low-temperature thermal annealing

A high mobility crystallized stacked-channel thin-film transistor (TFT) was fabricated and characterized. The stacked IGO/IGZO channel film consisting of an In-rich IGO layer and a conventional IGZO layer was fabricated by atomic layer deposition technology, where the upper layer of amorphous IGZO is induced into nanocrystals by the lower layer of preferentially oriented polycrystalline IGO during thermal annealing at a low temperature of 300 °C. The preferential growth of nanocrystalline IGZO with matched crystal structure in the channel favors the transport of electrons. In addition, the accumulation of a large number of electrons at the heterojunction due to energy band bending provides a strong guarantee for high mobility. The crystallized stacked IGO/IGZO TFT exhibits a superior field effect mobility of 95.7 cm2 V−1 s−1, which is 55.9% higher than that of single-layer IGO TFT. At the same time, the stability of the device was also dramatically improved. The proposed strategy is a simple and promising approach to prepare high performance TFTs for future display and semiconductor applications.

Uniform impact on individual megakaryocytes is essential for efficient in vitro platelet production

Size effect on Raman measured stress and strain induced phonon shifts in ultra-thin silicon film

The fabrication of complex nano-scale structures, which is a crucial step in the scaling of (nano)electronic devices, often leads to residual stress in the different layers present. This stress gradient can change many of the material properties, leading to changes in device performance, especially in the active part of the transistor, the channel. Measuring, understanding, and, ultimately, controlling the stress fields is hence crucial for many design steps. The level of stress can in principle be measured by micro-Raman spectroscopy. This, however, requires a priori knowledge of the mechanical properties of the material. However, mechanical properties start to deviate from the bulk values when film dimensions become thinner than 5 nm. If this effect is ignored, errors of up to 400% can be introduced in the extracted stress profile. In this work, we illustrate this effect for a range of Si (001) slabs with different silicon film thicknesses, ranging from 5 to 0.7 nm and provide best practices for the proper interpretation of micro-Raman stress measurements.