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Research on the acoustic emission characteristics and instability correlation effect of the dynamic response of waste dump slopes
Spatial tumor immune heterogeneity facilitates subtype co-existence and therapy response in pancreatic cancer
AbstractPancreatic ductal adenocarcinoma (PDAC) displays a high degree of spatial subtype heterogeneity and co-existence, linked to a diverse microenvironment and worse clinical outcome. However, the underlying mechanisms remain unclear. Here, by combining preclinical models, multi-center clinical, transcriptomic, proteomic, and patient bioimaging data, we identify an interplay between neoplastic intrinsic AP1 transcription factor dichotomy and extrinsic macrophages driving subtype co-existence and an immunosuppressive microenvironment. ATAC-, ChIP-, and RNA-seq analyses reveal that JUNB/AP1- and HDAC-mediated epigenetic programs repress pro-inflammatory signatures in tumor cells, antagonizing cJUN/AP1 signaling, favoring a therapy-responsive classical neoplastic state. This dichotomous regulation is amplified via regional TNF-α+ macrophages, which associates with a reactive phenotype and reduced CD8+ T cell infiltration in patients. Consequently, combined preclinical anti-TNF-α immunotherapy and chemotherapy reduces macrophages and promotes CD3+/CD8+ T cell infiltration in basal-like PDAC, improving survival. Hence, tumor cell-intrinsic epigenetic programs, together with extrinsic microenvironmental cues, facilitate intratumoral subtype heterogeneity and disease progression.
Coexistence of multiple electronic and phononic nodal lines in a two-dimensional macroporous carbon material
Investigations into topological materials typically emphasize either electronic or phononic properties in isolation, often disregarding their coexistence, which could restrict the full realization of their practical applications. Here, we investigate HOD-graphene, an emergent macroporous carbon material featuring a unique configuration of hexagonal, octagonal, and dodecagonal carbon rings. This distinctive structure imparts exceptional mechanical properties to the material. Using a combination of first-principles calculations and symmetry analysis, we demonstrate that HOD-graphene hosts multiple nodal lines within both its electronic and phononic spectra. For the electronic bands, three nodal lines and several Dirac points manifest near the Fermi energy, generating unconventional electronic properties and distinct topological characteristics. Likewise, the phonon spectrum displays pronounced nodal lines, intricately associated with the material's vibrational modes. Our findings provide a promising platform for exploring the coexistence of electronic and phononic multiple nodal lines in two-dimensional materials, opening avenues for realizing exotic quantum phenomena.
Methylcobalamin-containing nanofiber sheets have better neuroprotective effects than small intestinal submucosa sheets
Tumor microenvironment-responsive engineered hybrid nanomedicine for photodynamic-immunotherapy via multi-pronged amplification of reactive oxygen species
6 kV GaN p–n diode fabricated by hybrid epitaxial growth with regrowth interface treated by CF4 plasma
A high breakdown voltage was achieved for a p–n junction diode grown by a hybrid epitaxial growth. Using a quartz-free hydride vapor-phase epitaxy, a thick and extremely high-purity n−-GaN drift layer was grown on a GaN substrate. A p-GaN layer was grown on the n−-GaN drift layer using metal-organic vapor-phase epitaxy (MOVPE). Before the MOVPE growth, inductively coupled plasma dry etching treatment using CF4 gas was performed on the regrowth surface to reduce the effect of Si contamination. The device with a reduced effective donor sheet concentration at the regrowth interface obtained by the CF4 treatment achieved a high breakdown voltage of 6.23 kV with good diode characteristics. A clear correlation was found between the breakdown voltage and the effective donor concentration at the p–n junction determined by C–V measurements. It is predicted that a breakdown voltage as high as 8 kV can be obtained if the effective donor concentration at the p–n junction is reduced to 1 × 1012 cm−2 or lower.
GYY4137 ameliorates blood brain barrier damage by inhibiting autophagy mediated occludin degradation in cardiac arrest and resuscitation
Swarm navigation of cyborg-insects in unknown obstructed soft terrain
Defect-engineered electrical and optoelectronic properties of WS2 irradiated with 10 MeV protons
Transition metal dichalcogenides (TMDs), particularly tungsten disulfide (WS2), have gained considerable attention due to their versatile electrical and optoelectronic properties, making them promising candidates for next-generation nano(opto)electronic devices. This study investigates the impact of 10 MeV proton irradiation on the electrical and optoelectronic properties of WS2, focusing on the controlled introduction of defects, primarily sulfur vacancies, which are crucial for tailoring material properties and enhancing their capabilities. By varying proton fluences from 1 × 1013 to 5 × 1014 cm−2 at an energy of 10 MeV, the defect density was precisely modulated. The effects of this defect-engineering strategy were characterized using micro-Raman spectroscopy, low-temperature photoluminescence, and density functional theory calculations. Both electronic (field-effect transistor) and optoelectronic (photodetector) devices fabricated with defect-engineered WS2 exhibited a 24-fold decrease in contact resistance and a fivefold improvement in photogain. These results demonstrate the potential of proton irradiation as a powerful tool for defect engineering in TMDs. The findings underscore the promise of this approach for optimizing TMD-based devices for advanced electronic and optoelectronic applications, paving the way for tailored material properties in next-generation technologies.
Investigation of mechanical behavior of slag-stabilized rammed earth reinforced by carpet polyacrylic yarn waste
Anti-aliased metasurfaces beyond the Nyquist limit
Demonstration of asymmetric Hebbian learning based on analog resistive switching in Ag/Co3O4/p-Si memristor
In this work, brain-like experiential learning/forgetting ability is demonstrated with the help of various synaptic adaptation rules, namely, short-term potentiation/short-term depression, long-term potentiation/long-term depression, spike rate-dependent plasticity, and spike-time-dependent plasticity in a thin-film device. The model device used here is a unidirectional thin film of nanocrystalline Co3O4, grown on a p-Si (100) substrate using the pulsed laser deposition technique to fabricate a metal–insulator–semiconductor type memristor. Along with this, we found an analog bipolar-type switching behavior with excellent resistive switching properties in terms of endurance, retention, and ON–OFF ratio suitable for CMOS-based memory applications. The conduction and resistive switching mechanisms are elucidated using a speculative band diagram formulated from the UV-visible spectroscopy data.
Bioinformatics approaches to multi-omics analysis of the potential of CDKN2A as a biomarker and therapeutic target for uterine corpus endometrial carcinoma
Development of nucleus-targeted histone-tail-based photoaffinity probes to profile the epigenetic interactome in native cells
High-efficiency perovskite light-emitting diodes enabled by introducing a LiF modification layer
Surface defect passivation and exciton regulation remain a critical challenge in perovskite light-emitting diodes (PeLEDs). Organic molecules are widely used to solve these issues. However, the high sensitivity of perovskite films to the molecular groups and concentration limited their commercialization applications. Here, we develop a facile and low-cost passivation strategy that is compatible with traditional fabrication processes of PeLEDs. By depositing a thin LiF layer using vacuum thermal evaporation technique, the defects of perovskite film are effectively passivated. Simultaneously, the thin LiF layer protects the excitons formed in perovskite from quenching by the electron-transport layer. Due to the synergistic effect of LiF, an efficient green PeLED is achieved with a maximum current efficiency of 47.0 cd/A and luminance of 30 280 cd/m2, representing respective 65% and 166% increase than that of the control device without LiF modification layer (28.5 cd/A and 11 380 cd/m2). Our work provides an effective strategy and deep understanding of the interface regulation for achieving high-performance PeLEDs.
Regulation of innate immune response by miRNAs up-regulated in Stevens-Johnson syndrome with severe ocular complications
MAT2A inhibitor AG-270/S095033 in patients with advanced malignancies: a phase I trial
Optoelectronic synapse based on the Bi2O2Se/Cs3Cu2I5 heterojunction for neuromorphic computing
In this work, we report an optoelectronic synapse based on the Bi2O2Se/Cs3Cu2I5 heterojunction formed by consequently depositing Bi2O2Se and Cs3Cu2I5 thin films by chemical vapor deposition methods. The fabricated Au/Bi2O2Se/Cs3Cu2I5/Au devices exhibit the light-tunable photoresponse under visible light illumination. Synaptic functions including paired-pulse facilitation, the transition from short-term plasticity to long-term plasticity, associative learning and optical encoding, are conveniently reproduced on one single synaptic device by utilizing the light-tunable evolution of photocurrent. Furthermore, the front-end image preprocessing to enhance the accuracy and efficiency of image recognition was demonstrated based on the constructed device array (5 × 7). This indicates the potential application of Bi2O2Se/Cs3Cu2I5 optoelectronic synapses for the forthcoming neuromorphic computing.