(Zn,Ti)O Electron Transport Layer Enables the Highest Conversion Efficiency in Cd‐Free Sb <sub>2</sub> Se <sub>3</sub> Photocathodes for Stable Solar Hydrogen Production

S Shuo Chen Y Yong Chen H Hanhua Zhang (Shenzhen Key Laboratory of Advanced Thin Films and Applications Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province State Key Laboratory of Radio Frequency Heterogeneous Integration College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen Guangdong China) M Muhammad Abbas D Donglou Ren (State Key Laboratory of Featured Metal Materials and Life‐cycle Safety for Composite Structures MOE Key Laboratory of New Processing Technology for Nonferrous Metals and Materials and School of Resources Environment and Materials Guangxi University Nanning China) Y Yuexing Chen (Industrial Catalysis Center, Department of Chemical Engineering) J Jingting Luo (State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University 4 , Shenzhen 518060,) Z Zhuanghao Zheng (Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University 1 , Shenzhen, Guangdong 518060,) Z Zhenghua Su G Guangxing Liang

Abstract

ABSTRACT Antimony selenide (Sb 2 Se 3 ) has emerged as a promising photocathode material for photoelectrochemical (PEC)‐driven solar hydrogen production due to its low toxicity, cost‐effectiveness, and excellent photoelectric properties. Currently, efficient Sb 2 Se 3 photocathodes are mostly coupled with CdS electron transport layer (ETL), however, suffering from natural toxicity, parasitic light absorption, and interfacial mismatch and/or instability. In this study, we introduce a Cd‐free Sb 2 Se 3 photocathode with an atomic layer deposition‐processed (Zn,Ti)O ETL, which mitigates the respective limitations of binary oxides (i.e., ZnO and TiO 2 ). The optimized (Zn,Ti)O ETL enhances electron carrier density, establishes a favorable ‘spike‐like’ band alignment at the Sb 2 Se 3 /(Zn,Ti)O interface, significantly improves charge separation and transport efficiencies, as well as the stability. Consequently, the champion device achieves an impressive photocurrent density ( J ph ) of 31.1 mA/cm 2 , a record half‐cell solar‐to‐hydrogen (HC‐STH) efficiency of 5.27% for Cd‐free Sb 2 Se 3 photocathodes, and the highest unbiased STH efficiency of 2.50% in the Sb 2 Se 3 ‐BiVO 4 tandem cell, setting a new benchmark for eco‐friendly and high‐performance PEC processed green hydrogen production.

Article Details

Volume / Issue Vol. 38, Issue 11
Published February 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (10)

S

Shuo Chen

Y

Yong Chen

H

Hanhua Zhang

Shenzhen Key Laboratory of Advanced Thin Films and Applications Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province State Key Laboratory of Radio Frequency Heterogeneous Integration College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen Guangdong China

M

Muhammad Abbas

D

Donglou Ren

State Key Laboratory of Featured Metal Materials and Life‐cycle Safety for Composite Structures MOE Key Laboratory of New Processing Technology for Nonferrous Metals and Materials and School of Resources Environment and Materials Guangxi University Nanning China

Y

Yuexing Chen

Industrial Catalysis Center, Department of Chemical Engineering

J

Jingting Luo

State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University 4 , Shenzhen 518060,

Z

Zhuanghao Zheng

Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University 1 , Shenzhen, Guangdong 518060,

Z

Zhenghua Su

G

Guangxing Liang