Yttrium‐Doped MoS <sub>2</sub> With Optimized Interface Charge Injection and Hydrogen Binding for Efficient Hydrogen Evolution

S Shen'ao Xue (School of Physics, Institute of Quantum Physics, Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, and Hunan Key Laboratory of Nanophononics and Devices, Central South University 1 , Changsha 410083,) L Lan Luo H Hao Huang T Tao Xu S Sicheng Tao (The High School Attached to Hunan Normal University Changsha China) Y Yuzhou Cao Q Qinghao Meng Y Yali Lan (School of Physics Central South University Changsha China) J Junjie Jiang Y Yijia Wang (Key Laboratory of Micro‐Nano Fabrication and Device Manufacturing in Universities of Hunan Province School of Physics Central South University Changsha China) Q Quanlong Yang (Key Laboratory of Micro‐Nano Fabrication and Device Manufacturing in Universities of Hunan Province School of Physics Central South University Changsha China) F Fangping Ouyang J Junwei Fu (Hunan Joint International Research Center for Carbon Dioxide Resource Utilization, School of Physics)

Abstract

ABSTRACT On‐chip electrocatalytic microdevices (OCEMs) are versatile platforms for probing the intrinsic kinetics of individual nanomaterials. However, their applications in evaluating 2D van der Waals materials often suffer from substantial interfacial contact resistance at the electrode/catalyst junction and sluggish catalytic reaction kinetics at the catalyst/electrolyte interface. Herein, we develop an yttrium‐doping strategy for monolayer MoS 2 (Y‐MoS 2 ) that simultaneously optimizes charge injection across the solid–solid (electrode/catalyst) interface and hydrogen binding on the basal plane of MoS 2 . The Y doping downshifts the conduction band minimum of MoS 2 , lowering the Schottky barrier from 0.47 to 0.23 eV and enhancing electron injection across the electrode/catalyst interface. The matching spatial orbital symmetry of Y and Mo 4 d xz/yz induces strong d‐d electronic coupling, driving the formation of a favorable bridge hydrogen intermediate () with an optimized binding energy of 0.36 eV for hydrogen evolution reaction (HER) at the catalyst/electrolyte interface. Benefiting from this synergistic optimization of band alignment and hydrogen binding, Y‐MoS 2 exhibits superior HER performance, delivering an overpotential of 187 mV at 10 mA cm −2 , competitive with recent 2D MoS 2 ‐based electrocatalysts. This work establishes an optimized OCEM platform for decoupled mechanistic analysis and an orbital‐level tuning strategy for efficient electrocatalyst design.

Article Details

Volume / Issue Vol. 1, Issue 1
Published August 17, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (13)

S

Shen'ao Xue

School of Physics, Institute of Quantum Physics, Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, and Hunan Key Laboratory of Nanophononics and Devices, Central South University 1 , Changsha 410083,

L

Lan Luo

H

Hao Huang

T

Tao Xu

S

Sicheng Tao

The High School Attached to Hunan Normal University Changsha China

Y

Yuzhou Cao

Q

Qinghao Meng

Y

Yali Lan

School of Physics Central South University Changsha China

J

Junjie Jiang

Y

Yijia Wang

Key Laboratory of Micro‐Nano Fabrication and Device Manufacturing in Universities of Hunan Province School of Physics Central South University Changsha China

Q

Quanlong Yang

Key Laboratory of Micro‐Nano Fabrication and Device Manufacturing in Universities of Hunan Province School of Physics Central South University Changsha China

F

Fangping Ouyang

J

Junwei Fu

Hunan Joint International Research Center for Carbon Dioxide Resource Utilization, School of Physics