X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping
Abstract
Recently, efficient threading dislocation filtering was demonstrated for Ge on Si by utilizing an “aspect ratio trapping” technique, in which Ge is selectively grown in isolated SiO2 trenches or holes. In this work, x-ray diffraction from an array of micrometer-sized Ge islands on the Si substrate is studied experimentally and theoretically using the kinematical theory of diffraction and the Monte Carlo method. The model describes the tilt distribution between the islands and an interplay between the surface and interface strain. Evidence of strain distribution with depth is additionally shown by micro-Raman measurements, where the 632 and 785 nm excitations were used to probe the strain at different depths. These results provide a better understanding of the growth mechanisms for both selective area growth and aspect ratio trapping.
Article Details
Journal Info
Journal of Applied Physics
American Institute of Physics
Authors (11)
Hryhorii Stanchu
Institute for Nanoscience and Engineering, University of Arkansas 4 , Fayetteville, Arkansas 72701,
Serhii Kryvyi
Institute for Nanoscience and Engineering, University of Arkansas 1 , Fayetteville, Arkansas 72701,
Fernando M. de Oliveira
Institute for Nanoscience and Engineering, University of Arkansas 1 , Fayetteville, Arkansas 72701,
Stephen Margiotta
Department of Electrical and Computer Engineering, University of Massachusetts Lowell , Lowell, Massachusetts 01854,
Matthew Cook
Department of Molecular Biophysics and Biochemistry
Yuriy I. Mazur
Institute for Nanoscience and Engineering, University of Arkansas 1 , Fayetteville, Arkansas 72701,
Perry C. Grant
Air Force Research Laboratory, Space Warfare Directorate 2 , Kirtland AFB, New Mexico 87117,
Wei Du
Department of Urological Surgery Zhujiang Hospital Southern Medical University Guangzhou China
Baohua Li
Tsinghua Shenzhen International Graduate School
Gregory Salamo
Institute for Nanoscience and Engineering, University of Arkansas 1 , Fayetteville, Arkansas 72701,
Shui-Qing Yu
Department of Electrical Engineering and Computer Science, University of Arkansas 2 , Fayetteville, Arkansas 72710,