Wet Transfer of In Situ Grown Azo‐Containing Two‐Dimensional Conjugated Covalent Organic Framework Films for Photoswitchable Electronic Devices

K Kexin Wang (School of Engineering and Applied Sciences) B Bin Han F Fan Qiu (Key Laboratory of Biomass Chemical Engineering of Ministry of Education College of Chemical and Biological Engineering, Zhejiang University Hangzhou China) Y Yeonsu Jeong (Institute of Quantum Science, Department of Physics Inha University Incheon South Korea) Y Yusheng Chen (Department of Chemistry, Indiana University, 800 E. Kirkwood Avenue, Bloomington, Indiana 47405, United States) Y Yubin Fu (Key Lab of Functional Polymers for Sustainability of Jiangsu, School of Energy and Environment) C Christos Gatsios (IMEM‐CNR Institute of Materials for Electronics and Magnetism Trento Unit c/o Fondazione Bruno Kessler, Via alla Cascata 56/C Trento Italy) M Marco Vittorio Nardi (IMEM‐CNR Institute of Materials for Electronics and Magnetism Trento Unit c/o Fondazione Bruno Kessler, Via alla Cascata 56/C Trento Italy) M Melanie Timpel (IMEM‐CNR Institute of Materials for Electronics and Magnetism Trento Unit c/o Fondazione Bruno Kessler, Via alla Cascata 56/C Trento Italy) Y Yang Hou (College of Chemical and Biological Engineering, Key Laboratory of Biomass Chemical Engineering of Ministry of Education) S Shun‐Qi Xu (University of Strasbourg & CNRS ISIS & icFRC, 8 Allée Gaspard Monge Strasbourg France) P Paolo Samorì (CNRS, ISIS UMR 7006, University of Strasbourg, 8 Allée Gaspard Monge, Strasbourg F-67000, France)

Abstract

ABSTRACT Two‐dimensional π‐conjugated covalent organic frameworks (2D π‐COFs) combine in‐plane π‐delocalization with periodic open channels, making them versatile platforms for integrating functional groups into optoelectronic and neuromorphic systems. However, their predominant powder form has fundamentally constrained device integration and interfacial engineering. Herein, we demonstrate a general strategy for constructing high‐quality transition‐metal chalcogenide@2D π‐COF van der Waals heterostructures (vdWHs). Large‐area, atomically flat 2D π‐COF films are first grown on SiO 2 substrates via a liquid–solid interfacial reaction and subsequently transferred onto monolayer MoS 2 through a mild in situ wet‐transfer process. The resulting COF films exhibit atomic‐scale flatness and form clean interfaces, promoting efficient interfacial charge transfer in COF@MoS 2 heterojunctions. As a model system, we employ a robust imidazole‐linked 2D π‐COF (COF‐Azo) functionalized with azobenzene moieties, whose reversible trans‐cis photoisomerization dynamically modulates the heterojunction's electronic structure. The COF‐Azo@MoS 2 devices display pronounced and reversible photoswitching behavior, achieving a carrier density modulation of ∼6.7 × 10 11 cm −2 and an on‐state current variation of ∼43.7%. Importantly, optical control over the isomerization fraction enables non‐volatile memory behavior within the vdWHs. This work establishes a scalable route to atomically flat 2D π‐COF films as viable building blocks for vdW heterostructures and introduces a robust platform for optically reconfigurable optoelectronics and memory devices.

Article Details

Volume / Issue Vol. 65, Issue 32
Published August 03, 2026
ISSN 1433-7851
Publisher Wiley

Journal Info

Angewandte Chemie International Edition

Wiley

ISSN: 1433-7851 Physical Sciences

Authors (12)

K

Kexin Wang

School of Engineering and Applied Sciences

B

Bin Han

F

Fan Qiu

Key Laboratory of Biomass Chemical Engineering of Ministry of Education College of Chemical and Biological Engineering, Zhejiang University Hangzhou China

Y

Yeonsu Jeong

Institute of Quantum Science, Department of Physics Inha University Incheon South Korea

Y

Yusheng Chen

Department of Chemistry, Indiana University, 800 E. Kirkwood Avenue, Bloomington, Indiana 47405, United States

Y

Yubin Fu

Key Lab of Functional Polymers for Sustainability of Jiangsu, School of Energy and Environment

C

Christos Gatsios

IMEM‐CNR Institute of Materials for Electronics and Magnetism Trento Unit c/o Fondazione Bruno Kessler, Via alla Cascata 56/C Trento Italy

M

Marco Vittorio Nardi

IMEM‐CNR Institute of Materials for Electronics and Magnetism Trento Unit c/o Fondazione Bruno Kessler, Via alla Cascata 56/C Trento Italy

M

Melanie Timpel

IMEM‐CNR Institute of Materials for Electronics and Magnetism Trento Unit c/o Fondazione Bruno Kessler, Via alla Cascata 56/C Trento Italy

Y

Yang Hou

College of Chemical and Biological Engineering, Key Laboratory of Biomass Chemical Engineering of Ministry of Education

S

Shun‐Qi Xu

University of Strasbourg & CNRS ISIS & icFRC, 8 Allée Gaspard Monge Strasbourg France

P

Paolo Samorì

CNRS, ISIS UMR 7006, University of Strasbourg, 8 Allée Gaspard Monge, Strasbourg F-67000, France