Wafer‐Scale Ultrafine Wrinkle Architectures of TMDCs for Multifunctionality

J Jaesik Eom (Department of Physics Sungkyunkwan University Suwon South Korea) J Jungmoon Lim (Department of Physics Sungkyunkwan University Suwon South Korea) G Gyuhwi Jeong (Department of Physics Sungkyunkwan University Suwon South Korea) S Sohyeon Park M Min Jung B Byeongchan Kim (Department of Brain Sciences, Daegu Gyeongbuk Institute of Science and Technology) T Taehun Kim (Department of Microbiology and Immunology, College of Medicine, Seoul National University) J Junsung Byeon (Department of Physics Sungkyunkwan University Suwon South Korea) O Onesik Harm (Department of Physics Sungkyunkwan University Suwon South Korea) J Jaeseok Kim (Department of Physics Sungkyunkwan University Suwon South Korea) S Sangyeon Pak S SeungNam Cha (Department of Physics Sungkyunkwan University Suwon South Korea)

Abstract

ABSTRACT Intensely applied strain from wrinkled architecture mitigates intrinsic limitations of 2D materials while enhancing their capabilities through spatially modulated electronic and catalytic properties. Here, this study introduces a deterministic wafer‐scale fabrication strategy that enables densely distributed ultrafine wrinkled architectures in atomically thin molybdenum disulfide (MoS 2 ) crystals, achieving tensile strains up to 3.29% over 50% of the scan area. The wrinkle structures are obtained by modulating the parameters of a wet transfer method, including transfer liquid media, thermal energy, and polystyrene (PS) solution concentrations. Collectively, these results demonstrate a practical route to wafer‐scale fabrication of ultrafine wrinkle structures. The wrinkled MoS 2 (w‐MoS 2 ) exhibits optimal multifunctional device performance in electronics and as a hydrogen evolution catalyst. In a hydrogen evolution reaction (HER), the lowest Tafel slope (52.3 mV dec −1 ) is observed, comparable to that of metallic TMDC catalysts. Furthermore, our w‐MoS 2 memory device displays an on/off ratio of 5 × 10 7 with a large memory window corresponding to 65% of the total gate voltage ( V GS ) sweep range. This simple and innovative morphology engineering offers a viable and reproducible pathway toward high‐performance electronic and catalytic functionalities in highly strained 2D materials.

Article Details

Volume / Issue Vol. 1, Issue 1
Published August 12, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (12)

J

Jaesik Eom

Department of Physics Sungkyunkwan University Suwon South Korea

J

Jungmoon Lim

Department of Physics Sungkyunkwan University Suwon South Korea

G

Gyuhwi Jeong

Department of Physics Sungkyunkwan University Suwon South Korea

S

Sohyeon Park

M

Min Jung

B

Byeongchan Kim

Department of Brain Sciences, Daegu Gyeongbuk Institute of Science and Technology

T

Taehun Kim

Department of Microbiology and Immunology, College of Medicine, Seoul National University

J

Junsung Byeon

Department of Physics Sungkyunkwan University Suwon South Korea

O

Onesik Harm

Department of Physics Sungkyunkwan University Suwon South Korea

J

Jaeseok Kim

Department of Physics Sungkyunkwan University Suwon South Korea

S

Sangyeon Pak

S

SeungNam Cha

Department of Physics Sungkyunkwan University Suwon South Korea