Wafer-scale 2D MoS2 transistors with self-aligned angstrom gate length and nanometer channel length

Z Ziming Wang A Anhan Liu H Hengbin Ding F Fan Wu C Caifang Gao Y Yizhe Guo R Ruifang Xue P Peigen Zhang Y Yanming Liu T Tao Deng (China-UK Low Carbon College) T Tian-Ling Ren H He Tian (Center of Electron Microscopy, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.)