Voltage-controlled topological spin textures in the monolayer limit

Y Yangliu Wu B Bo Peng Z Zhaozhuo Zeng C Chendi Yang H Haipeng Lu P Peiheng Zhou (National Engineering Research Center of Electromagnetic Radiation Control Materials, State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China) J Jianliang Xie D Difei Liang L Linbo Zhang P Peng Yan H Haizhong Guo R Renchao Che L Longjiang Deng

Abstract

Abstract The physics of phase transitions in low-dimensional systems has long been a subject of significant research interest. Long-range magnetic order in the strict two-dimensional limit, whose discovery circumvented the Mermin-Wagner theorem, has rapidly emerged as a research focus. However, the demonstration of a non-trivial topological spin textures in two-dimensional limit has remained elusive. Here, we demonstrate the out-of-plane electric field breaks inversion symmetry while simultaneously modulating the electronic band structure, enabling electrically tunable spin-orbit interaction for creation and manipulation of topological spin textures in monolayer CrI 3 . The realization of ideal two-dimensional topological spin textures may offer not only an experimental testbed for probing the Berezinskii–Kosterlitz–Thouless mechanism, but also potential insights into unresolved quantum phenomena including superconductivity and superfluidity. Moreover, voltage-controlled spin-orbit interaction offers a novel pathway to engineer two-dimensional spin textures with tailored symmetries and topologies, while opening avenues for skyrmion-based next-generation information technologies.

Article Details

Volume / Issue Vol. 17, Issue 1
Published February 19, 2026
ISSN 2041-1723
Publisher Nature Portfolio

Journal Info

Nature Communications

Nature Portfolio

ISSN: 2041-1723 Open Access Life Sciences

Authors (13)

Y

Yangliu Wu

B

Bo Peng

Z

Zhaozhuo Zeng

C

Chendi Yang

H

Haipeng Lu

P

Peiheng Zhou

National Engineering Research Center of Electromagnetic Radiation Control Materials, State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China

J

Jianliang Xie

D

Difei Liang

L

Linbo Zhang

P

Peng Yan

H

Haizhong Guo

R

Renchao Che

L

Longjiang Deng