Volatile threshold switching and neural dynamics emulation in a chitosan–ZnO memristor for neuromorphic computing
Abstract
Neuromorphic computing demands energy-efficient and biologically plausible devices to emulate neural dynamics and sensory processing. This study explores the development and application of a chitosan-doped ZnO memristor for neuromorphic computing, focusing on its volatile threshold switching behavior and bio-inspired sensory applications. The device exhibits excellent memristive performance, with a high switching ratio (∼105), stable endurance (>104 cycles), and rapid switching speeds (turn-on/turn-off times of ∼23/21 µs). Symmetric threshold voltages (±2 V) and low resistance variability highlight its reliability. Integrated into an oscillatory neuron circuit (R–C configuration), the memristor emulates spiking dynamics, demonstrating tunable frequency and energy efficiency (∼832 nJ/spike). Furthermore, the circuit successfully replicates biological motion detection and sound localization by processing spatiotemporal input differences, mimicking direction-selective ganglion cells and medial superior olive neurons. These results validate the memristor’s potential for bio-inspired sensory systems, offering a scalable, energy-efficient platform for neuromorphic computing and artificial perception.
Article Details
Journal Info
The Journal of Chemical Physics
American Institute of Physics
Authors (3)
Yanmei Sun
Rui Liu
Zekai Zhang
Key Laboratory for Advanced Materials, Feringa Nobel Prize Scientist Joint Research Center, Frontiers Science Center for Materiobiology and Dynamic Chemistry, Institute of Fine Chemicals, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai 200237, P. R. China