Unveiling negative capacitance in ferroelectric heterostructures: A 3D energy landscape perspective

B Bo Li X Xingwang Zhang (Key Laboratory of Biomass Chemical Engineering of Ministry of Education, College of Chemical and Biological Engineering) D Dianchen Zhu (State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,) H Huabo Yang X Xueze Wang (State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,) J Ji Jiang Y Yuyang Di (Department of Electrical and Electronic Engineering, University of Nottingham 4 , University Park, Nottingham NG7 2RD,) L Ling Zhang J Jinliang Wu Z Zhigang Yin

Abstract

Although negative capacitance (NC) holds promise to overcome the Boltzmann tyranny, it is still subjected to debate due to the lack of a self-consistent, thermodynamic description. Herein, a 3D energy landscape is established for the ferroelectric/dielectric heterostructure, which enables precise tracking of the thermodynamic equilibria. This theoretical framework permits direct derivation of the ferroelectric component's differential capacitance, thereby provides a robust foundation for quantitative analysis of NC. Through mapping the depolarization voltage evolution and its associated energy contributions, we elucidate the underlying mechanism of the depolarization effect. Moreover, the 3D energy landscape allows for a comparative analysis of single-domain and multidomain switching pathways on the same energy scale, revealing that the former becomes energetically favorable over the latter when the series dielectric capacitance is sufficiently reduced. We also demonstrate that quasistatic NC does not necessarily ensure a dissipation-free state, challenging the conventional perspectives on the potential of NC field-effect transistors.

Article Details

Volume / Issue Vol. 137, Issue 22
Published June 14, 2025
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (10)

B

Bo Li

X

Xingwang Zhang

Key Laboratory of Biomass Chemical Engineering of Ministry of Education, College of Chemical and Biological Engineering

D

Dianchen Zhu

State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,

H

Huabo Yang

X

Xueze Wang

State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,

J

Ji Jiang

Y

Yuyang Di

Department of Electrical and Electronic Engineering, University of Nottingham 4 , University Park, Nottingham NG7 2RD,

L

Ling Zhang

J

Jinliang Wu

Z

Zhigang Yin