Unveiling Layer‐Dependent Phase Transition and Lattice Dynamics in Two‐Dimensional InSe

W Wenqian Shen L Lok Wing Wong (Department of Applied Physics The Hong Kong Polytechnic University Kowloon China) H Huizhong Bai (Department of Chemistry and Center of Super‐Diamond & Advanced Films (COSDAF) City University of Hong Kong Kowloon China) K Ka Ho Leung (Department of Chemistry and Center of Super‐Diamond & Advanced Films (COSDAF) City University of Hong Kong Kowloon China) T Tianren Chen (Department of Physics and Materials The Hong Kong Polytechnic University Kowloon China) P Ping Man (Department of Chemistry and Center of Super‐Diamond & Advanced Films (COSDAF) City University of Hong Kong Kowloon China) S Shan Gao J Jiong Zhao T Thuc Hue Ly (Department of Chemistry and Center of Super‐Diamond & Advanced Films City University of Hong Kong Kowloon China)

Abstract

ABSTRACT Two‐dimensional (2D) indium selenide (InSe) has attracted considerable interest due to its superior ballistic transport properties, superplasticity, and thermoelectric properties. Ferroelectricity and a variety of other intriguing physical characteristics. These arise from its van der Waals (vdW) layered structure, interlayer coupling, and intralayer interactions. The vibrational modes of 2D InSe are highly sensitive to thickness. The phase transitions in 2D materials, which are critical to their properties and applications, are closely related to interlayer and intralayer vibrations. However, the effect of the thickness on these vibrational behaviors during phase transitions remains insufficiently understood. In this study, we investigate the Raman spectra of β ‐InSe with layer numbers (LN) ranging from 4 to 33 under high pressure and construct a pressure LN phase diagram. Unexpectedly, due to the quantum confinement and defect effects, InSe flakes with fewer layers require more energy to undergo phase transitions which is confirmed by PL experiments and DFT calculations, irrespective of whether pressure is being increased or decreased. This research establishes a solid foundation for exploring and characterizing interlayer and intralayer lattice dynamics through pressure engineering in vdW materials.

Article Details

Volume / Issue Vol. 1, Issue 1
Published May 16, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (9)

W

Wenqian Shen

L

Lok Wing Wong

Department of Applied Physics The Hong Kong Polytechnic University Kowloon China

H

Huizhong Bai

Department of Chemistry and Center of Super‐Diamond & Advanced Films (COSDAF) City University of Hong Kong Kowloon China

K

Ka Ho Leung

Department of Chemistry and Center of Super‐Diamond & Advanced Films (COSDAF) City University of Hong Kong Kowloon China

T

Tianren Chen

Department of Physics and Materials The Hong Kong Polytechnic University Kowloon China

P

Ping Man

Department of Chemistry and Center of Super‐Diamond & Advanced Films (COSDAF) City University of Hong Kong Kowloon China

S

Shan Gao

J

Jiong Zhao

T

Thuc Hue Ly

Department of Chemistry and Center of Super‐Diamond & Advanced Films City University of Hong Kong Kowloon China