Ultrasound Tip‐Assisted Piezotronic Transduction in Monolayer MoS<sub>2</sub>

B Barnik Pal (School of Physical Sciences Indian Association for the Cultivation of Science 2A &amp; B Raja S. C. Mullick Road, Jadavpur Kolkata 700032 India) R Rahul Paramanik (School of Physical Sciences Indian Association for the Cultivation of Science 2A &amp; B Raja S. C. Mullick Road, Jadavpur Kolkata 700032 India) B Bipul Karmakar (School of Physical Sciences Indian Association for the Cultivation of Science 2A &amp; B Raja S. C. Mullick Road, Jadavpur Kolkata 700032 India) T Tanima Kundu (School of Physical Sciences Indian Association for the Cultivation of Science 2A &amp; B Raja S. C. Mullick Road, Jadavpur Kolkata 700032 India) M Mainak Palit (School of Physical Sciences Indian Association for the Cultivation of Science 2A &amp; B Raja S. C. Mullick Road, Jadavpur Kolkata 700032 India) B Bikash Das S Subhadeep Datta (School of Physical Sciences Indian Association for the Cultivation of Science 2A &amp; B Raja S. C. Mullick Road, Jadavpur Kolkata 700032 India)

Abstract

AbstractThe interaction of ultrasonic waves with piezoelectric materials provides a quantitative route to enhance electrical and mechanical coupling in van der Waals (vdW) heterostructures. Here, wire‐bonding tip‐assisted ultrasound (≈100 kHz) is presented as an effective approach to achieve piezoelectric transduction in monolayer MoS2 on Si/SiO2 substrates. Transient current measurements show reproducible sharp peaks with a peak‐to‐base ratio (Ipeak/Ibase ≈ 12) unique to monolayer MoS2, under an impact duration of 10–100 ms. Electrostatic gate voltage (Vg) and ultrasound power (WP) tunable piezocurrent exhibit 3–5 times higher sensitivity in the ON‐state (Vg ⩾ 0) compared to the OFF‐state. Multiple reflections of acoustic waves at source‐drain electrodes, with an increment in reflection coefficients, enhance the linewidth of peak currents, validated by microacoustic simulations of surface acoustic wave (SAW) propagation in submicron geometries. The localized strain and Joule heating under ultrasonic excitation may generate a temperature rise of ≈20 K, which reduces activation energy barriers, potentially enhancing reaction rates in temperature‐sensitive chemical processes, such as hydrogen peroxide decomposition. This thermal‐damage‐free method integrates with silicon‐based fabrication, establishing a robust platform for on‐chip catalysis and energy harvesting in FET‐based piezotransducers.

Article Details

Volume / Issue Vol. 37, Issue 24
Published June 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (7)

B

Barnik Pal

School of Physical Sciences Indian Association for the Cultivation of Science 2A &amp; B Raja S. C. Mullick Road, Jadavpur Kolkata 700032 India

R

Rahul Paramanik

School of Physical Sciences Indian Association for the Cultivation of Science 2A &amp; B Raja S. C. Mullick Road, Jadavpur Kolkata 700032 India

B

Bipul Karmakar

School of Physical Sciences Indian Association for the Cultivation of Science 2A &amp; B Raja S. C. Mullick Road, Jadavpur Kolkata 700032 India

T

Tanima Kundu

School of Physical Sciences Indian Association for the Cultivation of Science 2A &amp; B Raja S. C. Mullick Road, Jadavpur Kolkata 700032 India

M

Mainak Palit

School of Physical Sciences Indian Association for the Cultivation of Science 2A &amp; B Raja S. C. Mullick Road, Jadavpur Kolkata 700032 India

B

Bikash Das

S

Subhadeep Datta

School of Physical Sciences Indian Association for the Cultivation of Science 2A &amp; B Raja S. C. Mullick Road, Jadavpur Kolkata 700032 India