Ultrasensitive Deep‐Ultraviolet Photodetectors Based On Band Engineering and Ferroelectric Modulation
Abstract
AbstractWide bandgap semiconductors have emerged as a class of deep‐ultraviolet sensitive materials, showing great potentials for next‐generation integrated devices. Yet, to achieve a high photoresponse of deep‐ultraviolet detector without complicated designs at low supply voltage and weak light intensity is challenging. Herein, a new way is designed to fabricate an ultrasensitive vertical‐structured photodetector with epitaxial 7 nm BaTiO3 interlayer and 10 nm Ga2O3 photosensitive layer, realizing the detection to a rare weak deep UV light intensity (0.1 µW cm−2) at a voltage under 4.8 V and demonstrating a surge in responsivity up to 1.1 A W−1 with ultrafast response of 0.24 µs/33.4 µs (rise/decay). A responsivity of 3.8 mA W−1 at 0 V also has been reached. The dark current is suppressed by enlarged conduction band offset and meanwhile the photocurrent is enhanced by unidirectional conducting valance band offset, which formed by BaTiO3 interlayer. BaTiO3 also contributes most to the photoresponse at 0 V through its ferroelectric depolarization electric field. These results provide a path toward high‐sensitive, low‐power‐consumption, and highly‐integrated deep‐ultraviolet detection, beyond conventional ones.
Article Details
Authors (14)
Han Wu
Lincong Shu
Innovation Center of Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,
Qinghua Zhang
Shulin Sha
College of Physics MIIT Key Laboratory of Aerospace Information Materials and Physics Key Laboratory for Intelligent Nano Materials and Devices Nanjing University of Aeronautics and Astronautics No. 29 Jiangjun Road Nanjing 211106 China
Zeng Liu
Electronic-Photonic Smart Sensing Device R&D Team, School of Electronic Information Engineering, Inner Mongolia Key Laboratory of Intelligent Communication and Sensing and Signal Processing, Inner Mongolia University 2 , Hohhot 010021,
Shan Li
Institute of Solid State Chemistry, Department of Physical Chemistry, Beijing Advanced Innovation Center for Materials Genome Engineering
Sihan Yan
Innovation Center of Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,
Weihua Tang
Yuehui Wang
Key Laboratory of Biorheological Science and Technology, Ministry of Education, College of Bioengineering
Zhenping Wu
State Key Laboratory of Information Photonics and Optical Communications & School of Physical Science and Technology, Beijing University of Posts and Telecommunications 3 , Beijing 100876,
Kun Lin
Institute of Solid State Chemistry
Qiang Li
Jun Miao
Institute of Solid State Chemistry
Xianran Xing
Institute of Solid State Chemistry