Tunneling optoelectronic resistance effect in two-dimensional optoelectronic superlattices

Abstract

We propose and investigate the tunneling optoelectronic resistance effect in planar optoelectronic superlattices based on monolayer transition metal dichalcogenides. It is found that in the low incident energy regions, the transmission spectra show ideal line-type resonant bands for both identical and different optical helicity configurations of the periodic superlattices. By tuning the helicity of off-resonant circularly polarized light irradiated on adjacent modulated regions, the tunneling optoresistance effect can be realized. We find that this effect can be significantly enhanced by applying a positive gate voltage to the optical superlattices, which is named tunneling optoelectronic resistance (TOER) effect, and the intensity of the gate voltage can also affect the TOER effect greatly. Furthermore, we demonstrate that the TOER effect can be weakly enhanced by increasing the modulated periods of superlattices. Our results show that the total conductance differences between optoelectronic superlattices with different configurations may be dynamically tuned by the gate voltage and modulated periods, indicating that it has broad application prospects in high-speed storage, quantum computing, and spintronic or valleytronic devices.