Tuning Absorption State and Intermolecular Potential of Organic Semiconductors for Narrowband Ultraviolet Photodetection
Abstract
AbstractNarrowband response of organic semiconductors determines the band selectivity and anti‐interference of the organic photodetectors, which are pursued for a long time but have not yet been resolved in the UV band. Herein, a feasible strategy is developed to realize narrowband UV response by tuning the absorption state and intermolecular potential of organic semiconductors. The as‐designed non‐Donor‐Acceptor molecule, 2,5‐diphenylthieno[3,2‐b]thiophene (2,5‐DPTT), exhibits narrowband absorption by fully suppressing the charge transfer state absorption. Simultaneously, the intermolecular potential is significantly enhanced (to ≈90 KJ mol−1) by modulating the molecular planarity. Consequently, the UV photodetector based on 2,5‐DPTT achieves excellent narrowband response at 310 nm wavelength and a record‐breaking photosensitivity (P = 1.21 × 106) in the deep UV range. In the demonstration application of flame alarm, the flame detector based on 2,5‐DPTT single crystal exhibits excellent anti‐interference capability. This work provides the inspiration for designing narrowband responsive organic semiconductors and building up multifunctional optoelectronic devices.
Article Details
Authors (16)
Yining Ma
Quan Gao
School of Plant Protection
Yudong Li
Bio-Organic Chemistry, Departments of Biomedical Engineering and Chemical Engineering & Chemistry, Institute for Complex Molecular Systems
Yuankai Du
State Key Laboratory of Advanced Materials for Intelligent Sensing & Key Laboratory of Organic Integrated Circuit Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of Chemistry Institute of Molecular Aggregation Science Tianjin University Tianjin 300072 China
Yinan Huang
School of Electrical and Computer Engineering
Yajing Sun
Xiaosong Chen
Wenbo Wu
Fan Wu
Zhongwu Wang
Libin Zhao
Key Laboratory of Advanced Intelligent Protective Equipment Technology Ministry of Education Hebei University of Technology Tianjin 300401 China
Yongxu Hu
Cheng Han
Liqiang Li
Chuluo Yang
Shenzhen Key Laboratory of New Information Display and Storage Materials, College of Materials Science and Engineering
Wenping Hu