Tunable optical switching via magnetostatic field modulation in a small-radius hyperbolic metamaterial bent waveguide at THz frequencies

S Sheng Zhou Y Yue Liu M Mingze Sun S Shu Fang Fu (Key Laboratory for Photonic and Electronic Bandgap Materials, Chinese Ministry of Education, and School of Physics and Electronic Engineering, School of Physics and Electronic Engineering, Harbin Normal University 3 , Harbin 150025,) Q Qiang Zhang X Xiang Guang Wang (Key Laboratory for Photonic and Electronic Bandgap Materials, Chinese Ministry of Education, and School of Physics and Electronic Engineering, School of Physics and Electronic Engineering, Harbin Normal University 3 , Harbin 150025,) X Xuan Zhang Wang (Key Laboratory for Photonic and Electronic Bandgap Materials, Chinese Ministry of Education, and School of Physics and Electronic Engineering, School of Physics and Electronic Engineering, Harbin Normal University 3 , Harbin 150025,)

Abstract

A bent waveguide (BWG) made of hyperbolic material (such as indium arsenide) is designed to enable optical switching and modulation. The BWG comprises two straight waveguides and a 90o bent section, engineered to characterize its propagation length, figure of merit, propagation loss, and transmission spectra. Upon perpendicular application of an external magnetostatic field (B0) with increasing intensity, the transmission spectra exhibit a distinct conduction region (ON state) and a cutoff region (OFF state). Operating over a 1–8 THz bandwidth, the BWG achieves 85% transmission at a minimum radius of 3 μm, corresponding to 1/100 to 1/10 of the incident wavelength. This magnetically tunable BWG provides critical insights into the development of next-generation integrated terahertz photonics.

Article Details

Volume / Issue Vol. 138, Issue 3
Published July 21, 2025
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (7)

S

Sheng Zhou

Y

Yue Liu

M

Mingze Sun

S

Shu Fang Fu

Key Laboratory for Photonic and Electronic Bandgap Materials, Chinese Ministry of Education, and School of Physics and Electronic Engineering, School of Physics and Electronic Engineering, Harbin Normal University 3 , Harbin 150025,

Q

Qiang Zhang

X

Xiang Guang Wang

Key Laboratory for Photonic and Electronic Bandgap Materials, Chinese Ministry of Education, and School of Physics and Electronic Engineering, School of Physics and Electronic Engineering, Harbin Normal University 3 , Harbin 150025,

X

Xuan Zhang Wang

Key Laboratory for Photonic and Electronic Bandgap Materials, Chinese Ministry of Education, and School of Physics and Electronic Engineering, School of Physics and Electronic Engineering, Harbin Normal University 3 , Harbin 150025,