Triboron Multiresonant Emitter With Zigzag B/N Alignment Enables Near‐Degenerate Singlet–Triplet States for High‐Performance Non‐Sensitized OLEDs With Mild Roll‐Off

X Xin Xiong W Wei‐Xiong Guo (Department of Chemistry City University of Hong Kong Hong Kong SAR P. R. China) R Rajat Walia (Institute of Functional Nano & Soft Materials (FUNSOM) Soochow University Suzhou Jiangsu 215123 P.R. China) C Cheng‐Xi Li (Institute of Functional Nano & Soft Materials (FUNSOM) Joint International Research Laboratory of Carbon‐Based Functional Materials and Devices Soochow University Suzhou Jiangsu P. R. China) X Xiao‐Chun Fan (Institute of Functional Nano & Soft Materials (FUNSOM) Joint International Research Laboratory of Carbon‐Based Functional Materials and Devices Soochow University Suzhou Jiangsu P. R. China) X Xian‐Kai Chen (Institute of Functional Nano and Soft Materials (FUNSOM) Soochow University Suzhou 215123 P.R. China) Y Yi‐Zhong Shi (School of Materials Science and Engineering Suzhou University of Science and Technology Suzhou Jiangsu P. R. China) J Jia Yu K Kai Wang X Xiao‐Hong Zhang (Institute of Functional Nano & Soft Materials (FUNSOM) Joint International Research Laboratory of Carbon‐Based Functional Materials and Devices Soochow University Suzhou Jiangsu P. R. China)

Abstract

ABSTRACT Boron/nitrogen‐embedded polycyclic frameworks are attractive emitters in organic light‐emitting diodes (OLEDs) because they combine narrowband emission with thermally activated delayed fluorescence. Linear extension of multiresonant frameworks with zigzag boron/nitrogen alignment is predicted to enable bathochromic emission, reduced singlet–triplet energy gaps, and enhanced oscillator strengths, yet experimental access to higher‐order structures remains challenging. Here we report a site‐programmable, stepwise borylation strategy for constructing a triboron DABNA‐extended framework with zigzag boron/nitrogen alignment, L‐DABNA‐TriB. Our combined theoretical and experimental studies reveal how progressive linear extension from mono‐ to tri‐boron frameworks modulates the electronic structure, leading to bandgap narrowing, strengthened radiative transition, and near‐degenerate singlet and triplet excited states. Importantly, L‐DABNA‐TriB in toluene exhibits yellow–orange emission at 559 nm with a narrow full width at half‐maximum of 33 nm/0.13 eV, a singlet–triplet energy gap of ca. 4 meV, and a radiative decay rate of 1.5 × 10 8 s −1 . A non‐sensitized OLED based on L ‐DABNA‐TriB achieves a maximum external quantum efficiency of 38.0% and retains 35.2% at 1000 cd m −2 . This work establishes zigzag boron/nitrogen‐aligned linear extension as an effective molecular design strategy for narrowband emitters with efficient exciton harvesting at long wavelengths.

Article Details

Volume / Issue Vol. 1, Issue 1
Published August 03, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (10)

X

Xin Xiong

W

Wei‐Xiong Guo

Department of Chemistry City University of Hong Kong Hong Kong SAR P. R. China

R

Rajat Walia

Institute of Functional Nano & Soft Materials (FUNSOM) Soochow University Suzhou Jiangsu 215123 P.R. China

C

Cheng‐Xi Li

Institute of Functional Nano & Soft Materials (FUNSOM) Joint International Research Laboratory of Carbon‐Based Functional Materials and Devices Soochow University Suzhou Jiangsu P. R. China

X

Xiao‐Chun Fan

Institute of Functional Nano & Soft Materials (FUNSOM) Joint International Research Laboratory of Carbon‐Based Functional Materials and Devices Soochow University Suzhou Jiangsu P. R. China

X

Xian‐Kai Chen

Institute of Functional Nano and Soft Materials (FUNSOM) Soochow University Suzhou 215123 P.R. China

Y

Yi‐Zhong Shi

School of Materials Science and Engineering Suzhou University of Science and Technology Suzhou Jiangsu P. R. China

J

Jia Yu

K

Kai Wang

X

Xiao‐Hong Zhang

Institute of Functional Nano & Soft Materials (FUNSOM) Joint International Research Laboratory of Carbon‐Based Functional Materials and Devices Soochow University Suzhou Jiangsu P. R. China