Transparent Perovskite Light‐Emitting Diodes with Conductive Oxide Top Electrodes

M Michele Forzatti (Institute of Molecular Science University of Valencia Paterna Spain) S Sergio Martínez‐Saiz (Institute of Molecular Science University of Valencia Paterna Spain) M Morena Cervino (Institute of Molecular Science University of Valencia Paterna Spain) E Edoardo Stanzani (FLUXiM AG Winterthur Switzerland) S Sandra Jenatsch (FLUXiM AG Winterthur Switzerland) Q Qingsen Zeng J Joo Sung Kim D Dong‐Hyeok Kim (Department of Materials Science and Engineering Research Institute of Advanced Materials Seoul National University Seoul Republic of Korea) E Eojin Yoon T Tae‐Woo Lee (Department of Materials Science and Engineering Research Institute of Advanced Materials Seoul National University Seoul Republic of Korea) D Daniel Tordera H Henk J. Bolink (Institute of Molecular Science University of Valencia Paterna Spain)

Abstract

ABSTRACT Transparent light‐emitting diodes (TrLEDs) allow to simultaneous display data while maintaining the visibility of the surroundings. This feature unlocks a new range of applications. Perovskite‐based emitting materials are promising for such devices in view of their narrow emission spectrum and color tunability. Here, we show that depositing an indium tin oxide (ITO) electrode using pulsed laser deposition in combination with a metal oxide buffer layer is a universal approach for the fabrication of transparent perovskite LEDs (TrPeLEDs) with a variety of compositions and device configurations. Green TrPeLEDs based on in situ formed perovskite nanocrystals (NC) deposited directly on ITO coated glass substrates achieved a record‐high combined luminance of 150 000 cd m −2 . When instead a TrPeLED using a thin colloidal NCs layer was used it led to LEDs with an average visible transmittance of 80% and a color rendering index above 90.

Article Details

Volume / Issue Vol. 1, Issue 1
Published March 09, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (12)

M

Michele Forzatti

Institute of Molecular Science University of Valencia Paterna Spain

S

Sergio Martínez‐Saiz

Institute of Molecular Science University of Valencia Paterna Spain

M

Morena Cervino

Institute of Molecular Science University of Valencia Paterna Spain

E

Edoardo Stanzani

FLUXiM AG Winterthur Switzerland

S

Sandra Jenatsch

FLUXiM AG Winterthur Switzerland

Q

Qingsen Zeng

J

Joo Sung Kim

D

Dong‐Hyeok Kim

Department of Materials Science and Engineering Research Institute of Advanced Materials Seoul National University Seoul Republic of Korea

E

Eojin Yoon

T

Tae‐Woo Lee

Department of Materials Science and Engineering Research Institute of Advanced Materials Seoul National University Seoul Republic of Korea

D

Daniel Tordera

H

Henk J. Bolink

Institute of Molecular Science University of Valencia Paterna Spain