Trade-off between Hall sensitivity, temperature stability, and frequency response in a 2DEG nitride Hall-effect sensor
Abstract
We investigated the relationship between Hall sensitivity, temperature stability, and frequency response of III-nitride two-dimensional electron gas-based Hall-effect sensors. For this study, we utilized three different heterostructure designs, each with varying percentages of “Al” content in the (Al)GaN barrier layer. The relationship among Hall sensitivity, temperature stability, and frequency response was investigated by varying the 2DEG carrier mobility, sheet density, and sheet resistance of the Hall device. The investigation demonstrated and explained a trade-off of Hall sensitivity of the order of 50% to obtain a sensor with a 16% reduction in sensitivity over the temperature range from room temperature to 377 °C with a frequency bandwidth of approximately 5.8 MHz. However, in terms of input voltage utilization, AlN/GaN retains its advantages, offering high sensitivity together with enhanced frequency response.
Article Details
Journal Info
Journal of Applied Physics
American Institute of Physics
Authors (9)
Satish Shetty
Institute for Nanoscience and Engineering, University of Arkansas 1 , Fayetteville, Arkansas 72701,
Savannah R. Eisner
Department of Electrical Engineering, Columbia University 4 , New York, New York 10027,
Ayesha Hassan
Department of Electrical Engineering, University of Arkansas 3 , Fayetteville, Arkansas 72701,
Anand Lalwani
Department of Aeronautics and Astronautics, Stanford University 5 , Stanford, California 94305,
Yuriy I. Mazur
Institute for Nanoscience and Engineering, University of Arkansas 1 , Fayetteville, Arkansas 72701,
Morgan E. Ware
Institute of Nano Science and Engineering, University of Arkansas 2 , Fayetteville, Arkansas 72701,
Debbie G. Senesky
Department of Aeronautics and Astronautics, Stanford University 5 , Stanford, California 94305,
H. Alan Mantooth
Department of Electrical Engineering, University of Arkansas 3 , Fayetteville, Arkansas 72701,
Gregory J. Salamo
Institute for Nanoscience and Engineering, University of Arkansas 1 , Fayetteville, Arkansas 72701,