Tracing the depolarization field-induced backswitching and domain shape transformation in lithium niobate at the nanoscale

M Mikhail S. Kosobokov (School of Natural Sciences and Mathematics, Ural Federal University , Ekaterinburg 620000,) A Anton P. Turygin (School of Natural Sciences and Mathematics, Ural Federal University 2 , 620000 Ekaterinburg,) S Semen A. Melnikov (School of Natural Sciences and Mathematics, Ural Federal University , Ekaterinburg 620000,) V Vladimir Ya. Shur (School of Natural Sciences and Mathematics, Ural Federal University 2 , 620000 Ekaterinburg,) D Denis O. Alikin (School of Natural Sciences and Mathematics, Ural Federal University , Ekaterinburg 620000,)

Abstract

Controlling the domain structure in ferroelectric crystals offers a powerful means of tailoring their functional properties, such as conductance, piezoresponse, and non-linear optical behavior. In particular, maintaining the stability of artificially written domain patterns is crucial for the performance of ferroelectric devices in memristor applications. Spontaneous polarization reversal, or backswitching, remains one of the most elusive challenges, as it reshapes domains and alters current pathways along domain walls. Here, we directly track in situ the nanoscale evolution of the morphology of a single in-plane domain on the non-polar surface of a lithium niobate single crystal during polarization backswitching, using non-contact Kelvin probe force microscopy. Combined with finite element simulations, our results show that the field distribution at the domain base and apex governs the onset of backswitching, leading to complex and asymmetric shape transformations. The interplay between depolarization and screening electric fields is shown to influence ferroelectric domain stability, providing a strategy for controlling the performance of devices based on domain-wall conduction.

Article Details

Volume / Issue Vol. 138, Issue 20
Published November 28, 2025
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (5)

M

Mikhail S. Kosobokov

School of Natural Sciences and Mathematics, Ural Federal University , Ekaterinburg 620000,

A

Anton P. Turygin

School of Natural Sciences and Mathematics, Ural Federal University 2 , 620000 Ekaterinburg,

S

Semen A. Melnikov

School of Natural Sciences and Mathematics, Ural Federal University , Ekaterinburg 620000,

V

Vladimir Ya. Shur

School of Natural Sciences and Mathematics, Ural Federal University 2 , 620000 Ekaterinburg,

D

Denis O. Alikin

School of Natural Sciences and Mathematics, Ural Federal University , Ekaterinburg 620000,