Thickness-dependent thermoelectric characterization of 2D SnSe2 on a micro-chip platform

P Peng Xiao N Nathan Aubergier (Institut Néel, CNRS, Université Grenoble Alpes 2 , Grenoble 38000,) E Emigdio Chávez Ángel (Catalan Institute of Nanoscience and Nanotechnology, CSIC and BIST, Campus UAB 3 , Barcelona, Bellaterra 08193,) J Jeremie Maire (Univ. Bordeaux, CNRS, Bordeaux INP 4 , I2M UMR 5295, Talence 33400,) A Alexandros El Sachat (Institute of Nanoscience and Nanotechnology, National Center for Scientific Research “Demokritos,” 6 Athens, Agia Paraskevi 15341,) N Nolwenn Chessel (Moiz, c/o Institut Néel, CNRS 7 , Grenoble 38000,) D Dimitri Tainoff (Institut Néel, CNRS, Université Grenoble Alpes 2 , Grenoble 38000,) C Clivia M. Sotomayor Torres (International Iberian Nanotechnology Laboratory (INL) 1 , Braga 4715-330,) M Marianna Sledzinska (Catalan Institute of Nanoscience and Nanotechnology, CSIC and BIST, Campus UAB 3 , Barcelona, Bellaterra 08193,) S Stefan Dilhaire (Univ. Bordeaux, CNRS, LOMA UMR 1 , Talence 5798,) O Olivier Bourgeois (Institut Néel, CNRS, Université Grenoble Alpes 2 , Grenoble 38000,)

Abstract

Investigating the temperature dependence of the Seebeck coefficient in low-dimensional materials provides an effective means to uncover how crystallinity, size, and thickness influence thermoelectric performance. Such insights are crucial for advancing large-scale thermoelectric devices and Seebeck-based sensors. To enhance measurement precision and efficiency, we developed a microchip platform specifically tailored for accurate Seebeck coefficient measurements in low-dimensional systems. The chip accommodates a broad range of samples, including both polycrystalline thin films (chemically or physically deposited) and mechanically exfoliated two-dimensional (2D) crystals. It integrates micro-heaters, temperature sensors, and voltage electrodes, enabling the generation of controlled in-plane temperature gradients and the simultaneous measurement of the induced Seebeck voltage (ΔV). Finite-element simulations support the formation of stable and tunable temperature differences across the chip. To validate the platform, we first measured Bi2Te3-based thin films, obtaining Seebeck coefficients consistent with reported literature values, thereby confirming the accuracy and robustness of the setup. Subsequently, mechanically exfoliated crystalline SnSe2 flakes were investigated. Their Seebeck coefficient exhibited clear dependencies on both thickness and temperature, the absolute value increasing from −349 ± 20 μV/K at 100 K to −521 ± 10 μV/K at 300 K in a 198 nm-thick sample. These findings highlight the strong influence of dimensionality on thermoelectric transport in SnSe2. Overall, this work establishes a versatile platform for evaluating emerging 2D materials and their heterostructures, facilitating both fundamental research and the engineering of efficient 2D material-based thermoelectric devices.

Article Details

Volume / Issue Vol. 139, Issue 17
Published May 07, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (11)

P

Peng Xiao

N

Nathan Aubergier

Institut Néel, CNRS, Université Grenoble Alpes 2 , Grenoble 38000,

E

Emigdio Chávez Ángel

Catalan Institute of Nanoscience and Nanotechnology, CSIC and BIST, Campus UAB 3 , Barcelona, Bellaterra 08193,

J

Jeremie Maire

Univ. Bordeaux, CNRS, Bordeaux INP 4 , I2M UMR 5295, Talence 33400,

A

Alexandros El Sachat

Institute of Nanoscience and Nanotechnology, National Center for Scientific Research “Demokritos,” 6 Athens, Agia Paraskevi 15341,

N

Nolwenn Chessel

Moiz, c/o Institut Néel, CNRS 7 , Grenoble 38000,

D

Dimitri Tainoff

Institut Néel, CNRS, Université Grenoble Alpes 2 , Grenoble 38000,

C

Clivia M. Sotomayor Torres

International Iberian Nanotechnology Laboratory (INL) 1 , Braga 4715-330,

M

Marianna Sledzinska

Catalan Institute of Nanoscience and Nanotechnology, CSIC and BIST, Campus UAB 3 , Barcelona, Bellaterra 08193,

S

Stefan Dilhaire

Univ. Bordeaux, CNRS, LOMA UMR 1 , Talence 5798,

O

Olivier Bourgeois

Institut Néel, CNRS, Université Grenoble Alpes 2 , Grenoble 38000,