Thermoelectric properties of two-dimensional topological insulators TlBi and TlSb
Abstract
A comprehensive investigation into the thermoelectric (TE) properties of the two-dimensional TlBi and TlSb topological insulators has been conducted by means of first-principles calculations and nonequilibrium Green’s function methods. The TlBi (TlSb) monolayers of bandgap 0.413 eV (0.127 eV) show the high (moderate) TE figure of merit ZT≈2.6 (0.6) along the armchair and zigzag directions. In addition, the two ZT peaks along the two directions of the TlSb are almost identical, which are different from the case of the TlBi with the right ZT peak appearing at different chemical potentials. In the TlBi (TlSb) nanoribbons, the influences of the edge states and the bulk states on the TE properties have been fully revealed. The appearance of the edge states in the bulk bandgap enables the nanoribbons to behave as metals, which seriously suppresses the Seebeck coefficients and then the ZTs. As a consequence, the total ZTs become much smaller than the separate ZTs contributed by the edge and bulk states and smaller than the ZTs of the corresponding monolayers. The mechanism by which edge states influence TE properties provides a helpful reference for understanding the TE properties of analogous two-dimensional topological insulators.
Article Details
Journal Info
Journal of Applied Physics
American Institute of Physics
Authors (8)
L. J. Gong
School of Physics, Beijing Institute of Technology 1 , Beijing 100081,
R. S. Cheng
School of Physics, Beijing Institute of Technology 1 , Beijing 100081,
Q. Z. Han
Beijing Key Laboratory of Fault-Tolerant Quantum Computing, Beijing Academy of Quantum Information Sciences 2 , Beijing 100193,
J. Yang
H. L. Shi
Institute of Solid State Physics, Shanxi Datong University 4 , Datong 037009,
Y. H. Zhao
School of Chemical Engineering, University of Chinese Academy of Sciences 6 , Beijing 100049,
L. J. Shi
School of Physics, Beijing Institute of Technology 1 , Beijing 100081,
Z. T. Jiang
School of Physics, Beijing Institute of Technology 1 , Beijing 100081,