Thermoelectric properties of two-dimensional topological insulators TlBi and TlSb

L L. J. Gong (School of Physics, Beijing Institute of Technology 1 , Beijing 100081,) R R. S. Cheng (School of Physics, Beijing Institute of Technology 1 , Beijing 100081,) Q Q. Z. Han (Beijing Key Laboratory of Fault-Tolerant Quantum Computing, Beijing Academy of Quantum Information Sciences 2 , Beijing 100193,) J J. Yang H H. L. Shi (Institute of Solid State Physics, Shanxi Datong University 4 , Datong 037009,) Y Y. H. Zhao (School of Chemical Engineering, University of Chinese Academy of Sciences 6 , Beijing 100049,) L L. J. Shi (School of Physics, Beijing Institute of Technology 1 , Beijing 100081,) Z Z. T. Jiang (School of Physics, Beijing Institute of Technology 1 , Beijing 100081,)

Abstract

A comprehensive investigation into the thermoelectric (TE) properties of the two-dimensional TlBi and TlSb topological insulators has been conducted by means of first-principles calculations and nonequilibrium Green’s function methods. The TlBi (TlSb) monolayers of bandgap 0.413 eV (0.127 eV) show the high (moderate) TE figure of merit ZT≈2.6 (0.6) along the armchair and zigzag directions. In addition, the two ZT peaks along the two directions of the TlSb are almost identical, which are different from the case of the TlBi with the right ZT peak appearing at different chemical potentials. In the TlBi (TlSb) nanoribbons, the influences of the edge states and the bulk states on the TE properties have been fully revealed. The appearance of the edge states in the bulk bandgap enables the nanoribbons to behave as metals, which seriously suppresses the Seebeck coefficients and then the ZTs. As a consequence, the total ZTs become much smaller than the separate ZTs contributed by the edge and bulk states and smaller than the ZTs of the corresponding monolayers. The mechanism by which edge states influence TE properties provides a helpful reference for understanding the TE properties of analogous two-dimensional topological insulators.

Article Details

Volume / Issue Vol. 139, Issue 9
Published March 07, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (8)

L

L. J. Gong

School of Physics, Beijing Institute of Technology 1 , Beijing 100081,

R

R. S. Cheng

School of Physics, Beijing Institute of Technology 1 , Beijing 100081,

Q

Q. Z. Han

Beijing Key Laboratory of Fault-Tolerant Quantum Computing, Beijing Academy of Quantum Information Sciences 2 , Beijing 100193,

J

J. Yang

H

H. L. Shi

Institute of Solid State Physics, Shanxi Datong University 4 , Datong 037009,

Y

Y. H. Zhao

School of Chemical Engineering, University of Chinese Academy of Sciences 6 , Beijing 100049,

L

L. J. Shi

School of Physics, Beijing Institute of Technology 1 , Beijing 100081,

Z

Z. T. Jiang

School of Physics, Beijing Institute of Technology 1 , Beijing 100081,