Thermally tunable dual channel toroidal metasurface on VO2 platform

Y Yogitha S N (Department of Physics, School of Engineering, Anurag University 1 , Hyderabad 500088,) N Nityananda Acharyya (Department of Physics, School of Engineering, Anurag University 1 , Hyderabad 500088,) A Abhishek Mishra M Mangababu Akkanaboina (Department of Physics, Banaras Hindu University 3 , Varanasi, Uttar Pradesh 221005,) A Amit Verma D Dhanvir Singh Rana (Department of Physics, Indian Institute of Science Education and Research Bhopal 2 , Bhopal 462066,) D Dibakar Roy Chowdhury (Department of Physics, School of Engineering, Anurag University 1 , Hyderabad 500088,)

Abstract

Active modulation of electromagnetic response in terahertz (THz) regime has gathered plenty of attention owing to its multifunctional applications. In this regard, metasurfaces integrated with VO2 as active material can create compelling pathways for actively controlling terahertz propagation. Hence, we have demonstrated a design of dual toroidal active metasurface by realizing plasmonic split-ring resonators on the VO2 thin film for dynamic and real-time control over THz wave propagation. These metasurfaces exhibit agile modulation of multiple resonances by exploiting insulator-to-metal transition (IMT) phenomena exhibited by VO2. For this purpose, sample temperature is varied from 26 to 110 °C. It is observed that at 110 °C, VO2 conductivity increased significantly resulting in a 46% peak amplitude modulation with respect to room temperature. Besides temperature induced tunability mediated by VO2 activated IMT, these metasurfaces manifest temperature tunable electric, magnetic, and toroidal modes which is further validated by rigorous multipole analysis. Hence, these outcomes provide a framework for implementing VO2 based temperature tunable THz metadevices for futuristic applications such as thermal sensors, modulators, terahertz switching, tunable absorbers, and photonic memory.

Article Details

Volume / Issue Vol. 137, Issue 19
Published May 21, 2025
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (7)

Y

Yogitha S N

Department of Physics, School of Engineering, Anurag University 1 , Hyderabad 500088,

N

Nityananda Acharyya

Department of Physics, School of Engineering, Anurag University 1 , Hyderabad 500088,

A

Abhishek Mishra

M

Mangababu Akkanaboina

Department of Physics, Banaras Hindu University 3 , Varanasi, Uttar Pradesh 221005,

A

Amit Verma

D

Dhanvir Singh Rana

Department of Physics, Indian Institute of Science Education and Research Bhopal 2 , Bhopal 462066,

D

Dibakar Roy Chowdhury

Department of Physics, School of Engineering, Anurag University 1 , Hyderabad 500088,