The role of small-angle electron–electron scattering in transverse magnetic focusing experiment

D Dmitry A. Egorov (Rzhanov Institute of Semiconductor Physics SB RAS 1 , 13 Lavrentiev Ave., Novosibirsk 630090,) D Dmitriy A. Pokhabov (Rzhanov Institute of Semiconductor Physics SB RAS 1 , 13 Lavrentiev Ave., Novosibirsk 630090,) E Evgeny Yu. Zhdanov (Rzhanov Institute of Semiconductor Physics SB RAS 1 , 13 Lavrentiev Ave., Novosibirsk 630090,) A Andrey A. Shevyrin (Rzhanov Institute of Semiconductor Physics SB RAS 1 , 13 Lavrentyeva ave., Novosibirsk 630090,) A Askhat K. Bakarov (Rzhanov Institute of Semiconductor Physics SB RAS 1 , 13 Lavrentyeva ave., Novosibirsk 630090,) A Alexander A. Shklyaev (Rzhanov Institute of Semiconductor Physics SB RAS 1 , 13 Lavrentyeva ave., Novosibirsk 630090,) A Arthur G. Pogosov (Rzhanov Institute of Semiconductor Physics SB RAS 1 , 13 Lavrentyeva ave., Novosibirsk 630090,)

Abstract

We demonstrate the crucial role of small-angle scattering in transverse magnetic focusing (TMF) in ballistic GaAs/AlGaAs heterostructures. Measurements in various samples show that the role significantly depends on their geometry. We propose a phenomenological model parameterizing this dependence with the angular acceptance of the detecting contact. This model is consistent with the diversity of experimental data and, therefore, enables accurate extraction of the key characteristic of inter-electron (e–e) interaction—the e–e scattering length—from TMF experiment, thus turning it into a uniquely effective tool for studying e–e scattering.

Article Details

Volume / Issue Vol. 138, Issue 11
Published September 21, 2025
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (7)

D

Dmitry A. Egorov

Rzhanov Institute of Semiconductor Physics SB RAS 1 , 13 Lavrentiev Ave., Novosibirsk 630090,

D

Dmitriy A. Pokhabov

Rzhanov Institute of Semiconductor Physics SB RAS 1 , 13 Lavrentiev Ave., Novosibirsk 630090,

E

Evgeny Yu. Zhdanov

Rzhanov Institute of Semiconductor Physics SB RAS 1 , 13 Lavrentiev Ave., Novosibirsk 630090,

A

Andrey A. Shevyrin

Rzhanov Institute of Semiconductor Physics SB RAS 1 , 13 Lavrentyeva ave., Novosibirsk 630090,

A

Askhat K. Bakarov

Rzhanov Institute of Semiconductor Physics SB RAS 1 , 13 Lavrentyeva ave., Novosibirsk 630090,

A

Alexander A. Shklyaev

Rzhanov Institute of Semiconductor Physics SB RAS 1 , 13 Lavrentyeva ave., Novosibirsk 630090,

A

Arthur G. Pogosov

Rzhanov Institute of Semiconductor Physics SB RAS 1 , 13 Lavrentyeva ave., Novosibirsk 630090,