The p-type conduction and Schottky junction of Ag-doped ZnSnN2
Abstract
The p-type conduction of Ag-doped ZnSnN2 (AZTN) is studied with experiments and density functional theory (DFT) calculation. The experimental results show that doping ZnSnN2 with Ag introduces no impurity phase but reduces the optical bandgap. The AZTN samples are p-type conductive with hole density of 1015–1016 cm−3 and the p-type origin is likely the doped Ag atoms which very possibly substitute Zn or Sn in the cation sublattice. These observations are consistent with the DFT calculation. The p-type conduction of the AZTN samples is further revealed by the Ohmic contact to Pt and the Schottky contact to Ag. The latter is demonstrated with the rectifying IV curves and the energy band alignment measured with ultraviolet photoelectron spectroscopy. The current transport mechanism of the AZTN\Ag Schottky junction is thermionic emission.
Article Details
Journal Info
Journal of Applied Physics
American Institute of Physics
Authors (8)
Xing-Min Cai
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, and State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University , Shenzhen 518060,
Jian-Lin Liang
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, and State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University , Shenzhen 518060,
Qian Gao
College of Information Science and Engineering
Arzoo Hassan
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, and State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University 1 , Shenzhen, Guangdong Province 518060,
Umer Younis
Department of Chemistry, Southern University of Science and Technology 2 , Shenzhen, Guangdong Province 518055,
Xiao-Qing Tian
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, and State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University 1 , Shenzhen, Guangdong Province 518060,
Dong-Ping Zhang
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, and State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University , Shenzhen 518060,
Fan Ye