The influence of atmospheric pressure plasma jet on oxidative termination of diamond surface

A Ann Sung (Department of Mechanical Engineering, College of Engineering, National Yang Ming Chiao Tung University 1 , Hsinchu City 300,) H Hao-Hsiang Weng (Department of Mechanical Engineering, College of Engineering, National Yang Ming Chiao Tung University 1 , Hsinchu City 300,) J Jin-Hao Jhang (Taiwan Semiconductor Manufacturing Company Limited 2 , Hsinchu City 300,) W Wei-Yen Woon (Taiwan Semiconductor Manufacturing Company Limited 2 , Hsinchu City 300,) P Po-Yueh Wang (Department of Mechanical Engineering, College of Engineering, National Yang Ming Chiao Tung University 1 , Hsinchu City 300,) Y Yun-Chien Cheng (Department of Mechanical Engineering, National Yang Ming Chiao Tung University 3 , No. 1001, Daxue Rd., East Dist., Hsinchu City 30010,)

Abstract

This study investigates the effects of atmospheric pressure plasma jet on diamond surface functionalization, which is key for plasma-assisted polishing. By varying plasma parameters including voltage waveforms, substrate temperature, reactive gas composition, and flow rate, we identify conditions that enhance hydroxyl and atomic oxygen radical formation and promote sp3-to-sp2 carbon conversion. Pulsed and sinusoidal waveforms are compared, along with the influence of pulse rise and fall times. Optical emission spectroscopy and x-ray photoelectron spectroscopy analyses show that pulsed voltages with short rise and fall times and higher substrate temperature significantly enhance surface oxidation. Increasing gas flow facilitates the generation of excited species, producing more oxygen and hydroxyl terminations. Oxygen addition quenches plasma, and the maximum hydroxyl radical yield is observed at 1500 ppm humidity.

Article Details

Volume / Issue Vol. 139, Issue 19
Published May 21, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (6)

A

Ann Sung

Department of Mechanical Engineering, College of Engineering, National Yang Ming Chiao Tung University 1 , Hsinchu City 300,

H

Hao-Hsiang Weng

Department of Mechanical Engineering, College of Engineering, National Yang Ming Chiao Tung University 1 , Hsinchu City 300,

J

Jin-Hao Jhang

Taiwan Semiconductor Manufacturing Company Limited 2 , Hsinchu City 300,

W

Wei-Yen Woon

Taiwan Semiconductor Manufacturing Company Limited 2 , Hsinchu City 300,

P

Po-Yueh Wang

Department of Mechanical Engineering, College of Engineering, National Yang Ming Chiao Tung University 1 , Hsinchu City 300,

Y

Yun-Chien Cheng

Department of Mechanical Engineering, National Yang Ming Chiao Tung University 3 , No. 1001, Daxue Rd., East Dist., Hsinchu City 30010,