The impact of many-body effects on the properties of β-(AlGa)2O3/Ga2O3 quantum cascade structure

Y Yan Liu P Ping Wang D Dao-Hua Zhang (Shenzhen Pinghu Laboratory 1 , Shenzhen 518111,) Y Yu-Xi Wan (Group of the Fourth-generation Semiconductor Materials and Devices, Shenzhen Pinghu Laboratory 1 , Shenzhen 518111,) T Ting Yang (Key Laboratory for Soft Chemistry and Functional Materials of Ministry Education, School of Chemistry and Chemical Engineering) X Xiao-Ping Wang (Department of Plant Protection, Hubei Key Laboratory of Insect Resources Utilization and Sustainable Pest Management, College of Plant Science and Technology, Huazhong Agricultural University)

Abstract

The impacts of many-body effects, which include the Hartree potential, exchange-correlation potential, depolarization effect, and excitonic effect, on the n-type periodic β-(Al0.3Ga0.7)2O3/Ga2O3 quantum cascade structure with four quantum wells of different widths have been theoretically investigated. The conduction band structure and wave functions of the device were obtained by iteration of the Schrödinger and Poisson equations to describe the bound-to-bound electronic transport processes. The results show that the many-body effects make a significant contribution to the energy band parameters, especially the energy level and wave function of subbands in the active wells. By considering many-body effects, the peak absorption coefficient increases from 6.14 × 10−4 to 1246.93 cm−1. The depolarization and excitonic effects lead to a peak response wavelength shift of approximately 1.33 μm. When the temperature increases from 77 to 300 K, the peak responsivity of the long wavelength infrared β-(AlGa)2O3/Ga2O3 quantum cascade detector (QCD) only decreases 22.87% and the peak response wavelength remains almost constant, indicating an excellent temperature stability. Moreover, the room-temperature dark current of proposed QCD is 1.46 × 10−15 A, which is much lower than that of QCDs based on some materials and operating at similar wavelengths. This work would benefit the research and development of β-(AlGa)2O3/Ga2O3 QCDs.

Article Details

Volume / Issue Vol. 137, Issue 14
Published April 14, 2025
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (6)

Y

Yan Liu

P

Ping Wang

D

Dao-Hua Zhang

Shenzhen Pinghu Laboratory 1 , Shenzhen 518111,

Y

Yu-Xi Wan

Group of the Fourth-generation Semiconductor Materials and Devices, Shenzhen Pinghu Laboratory 1 , Shenzhen 518111,

T

Ting Yang

Key Laboratory for Soft Chemistry and Functional Materials of Ministry Education, School of Chemistry and Chemical Engineering

X

Xiao-Ping Wang

Department of Plant Protection, Hubei Key Laboratory of Insect Resources Utilization and Sustainable Pest Management, College of Plant Science and Technology, Huazhong Agricultural University