The heterostructure of hexagonal boron nitride with wurtzite III-nitrides for optoelectronic and electronic applications

Abstract

Semiconductor heterostructures are essential for advancing modern technology, facilitating the development of more efficient and powerful electronic and optoelectronic devices. Conventional heterostructures, formed through the covalent bonding or the ionic bonding of distinct materials at their atomic-scale interfaces, are inherently constrained by lattice matching, which restricts material selection and design flexibility. In contrast, heterostructures involving two-dimensional layered materials utilize van der Waals (vdW) forces for bonding, allowing for more versatile and flexible assembly of structurally dissimilar materials, offering new opportunities beyond traditional epitaxial approaches. In this review, we focus on hexagonal boron nitride (h-BN)/AlGaInN heterostructures, where AlGaInN—recognized for their excellent electronic and optical properties—is integrated with hexagonal boron nitride (h-BN), a 2D III-nitride material with a wide bandgap and exceptional thermal and chemical stability. We discuss fabrication strategies for achieving high-quality h-BN/AlGaInN heterostructures, their influence on optoelectronic performance, and the role of h-BN in enhancing device efficiency and facilitating vdW epitaxy for flexible electronics. Finally, we outline key challenges and future research directions, emphasizing the potential of 2D/3D III-nitride heterostructures for next-generation semiconductor technologies.