Ternary BiSeBr for polarization-sensitive infrared photodetector
Abstract
Infrared optoelectronic detectors are essential in a variety of applications. This research focuses on investigating the phonon vibrations and optoelectronic properties of BiSeBr, as well as the development of a photodetector based on BiSeBr. The phonon vibration anisotropy was confirmed using angle-resolved polarized Raman spectroscopy. Remarkably, the BiSeBr-based photodetector demonstrates high responsivities of 3.70 and 0.445 A/W when exposed to 638 and 980 nm laser light, respectively. Additionally, the photodetector shows notable polarization sensitivity, with anisotropy ratios of 1.79 and 1.56 under the 980 and 638 nm laser illumination, respectively. These excellent optoelectronic properties make BiSeBr a highly competitive candidate for future polarization-sensitive infrared photodetector applications.
Article Details
Journal Info
Journal of Applied Physics
American Institute of Physics
Authors (12)
Kexin Chen
Canhui Pan
Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, Key Laboratory for Multifunctional Ionic Electronic Materials and Devices, College of Physics and Electronics, Hunan Normal University , Changsha 410081, Hunan,
Jianan Li
Xuanmao Xu
Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, Key Laboratory for Multifunctional Ionic Electronic Materials and Devices, College of Physics and Electronics, Hunan Normal University , Changsha 410081, Hunan,
Xue Chen
Junhao Huang
Beijing Frontier Research Center for Biological Structures, State Key Laboratory of Membrane Biology, Tsinghua-Peking Joint Center for Life Sciences, School of Life Sciences, Tsinghua University, Beijing, China.
Yanling Yin
Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, College of Physics and Information Science, Hunan Normal University , Changsha 410081, Hunan,
Weichang Zhou
School of Physics and Electronics, Hunan Normal University 3 , Changsha 410081,
Yuehua Peng
Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, College of Physics and Information Science, Hunan Normal University , Changsha 410081, Hunan,
Jifei Wang
Key Laboratory of Low‐Dimensional Quantum Structures and Quantum Control of Ministry of Education, Department of Physics Hunan Normal University Changsha 410081 P.R. China
Weike Wang
Dongsheng Tang
Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, Key Laboratory for Multifunctional Ionic Electronic Materials and Devices, College of Physics and Electronics, Hunan Normal University , Changsha 410081, Hunan,