Terahertz ultra-broadband perfect absorption and absorption-to-transparency switching based on Brewster metasurfaces

W Wenxuan Zhong (Hebei Key Laboratory of Physics and Energy Technology, North China Electric Power University 1 , Baoding 071003,) W Wenli An (Collaborative Innovation Center for Eco‐Friendly and Fire‐Safety Polymeric Materials (MoE) National Key Laboratory of Advanced Polymer Materials Engineering National Engineering Laboratory of Eco‐Friendly Polymeric Materials (Sichuan) College of Chemistry Sichuan University Chengdu China) J Jin Wang G Guanhua Ren (State Key Laboratory of Green Chemical Engineering and Industrial Catalysis, Centre for Computational Chemistry and Research Institute of Industrial Catalysis) Z Zhi Ren (School of Science, Westlake Institute for Advanced Study) S Shuai Li S Songtao Li L Li Li R Ruoxing Wang

Abstract

In this paper, we propose a non-resonant tilted anisotropic Brewster metasurface to investigate its ultra-broadband absorption characteristics in the terahertz (THz) band. It consists of periodically tilted vanadium dioxide (VO2) films arranged in a silicon dioxide substrate. Based on the anomalous Brewster effect, the metasurface can exhibit perfect broadband absorption characteristics when VO2 is in the metallic phase. Through VO2 phase transition to the insulating phase, the metasurface can present perfect broadband transmission characteristics, achieving a THz perfect broadband absorption/transmission switch. The effect of the structural parameters of the Brewster metasurface on its absorption performance is analyzed. Its broadband high absorption performance can not only almost cover the conventional full THz band, but also be extended to higher frequencies to achieve ultra-broadband high absorption ranging from 2 to 22.5 THz. Moreover, a gradient Brewster metasurface is designed to exhibit dynamical controllability toward THz waves with nearly omnidirectional wavefronts. The proposed metasurfaces have great potential for applications in THz stealth and THz switching devices.

Article Details

Volume / Issue Vol. 138, Issue 9
Published September 07, 2025
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (9)

W

Wenxuan Zhong

Hebei Key Laboratory of Physics and Energy Technology, North China Electric Power University 1 , Baoding 071003,

W

Wenli An

Collaborative Innovation Center for Eco‐Friendly and Fire‐Safety Polymeric Materials (MoE) National Key Laboratory of Advanced Polymer Materials Engineering National Engineering Laboratory of Eco‐Friendly Polymeric Materials (Sichuan) College of Chemistry Sichuan University Chengdu China

J

Jin Wang

G

Guanhua Ren

State Key Laboratory of Green Chemical Engineering and Industrial Catalysis, Centre for Computational Chemistry and Research Institute of Industrial Catalysis

Z

Zhi Ren

School of Science, Westlake Institute for Advanced Study

S

Shuai Li

S

Songtao Li

L

Li Li

R

Ruoxing Wang