Terahertz Spin‐to‐Charge Conversion in Strontium Iridate‐Based Magnetic Heterostructures

A Ali Abdelaziem Z Ziqi Li G Ganesh Ji Omar (Department of Physics Faculty of Science National University of Singapore 2 Science Drive 3, Blk S12 Singapore 117551 Singapore) L Lisen Huang (Institute of Materials Research and Engineering (IMRE) Agency for Science Technology and Research (A*STAR) 2 Fusionopolis Way, Innovis 08‐03 Singapore 138634 Singapore) P Piyush Agarwal (Institute of Materials Research and Engineering, Agency for Science, Technology and Research 2 , Fusionopolis Way 2, Singapore 138634,) Y Yao Wu (School of Materials Science & Engineering) H Hong Yan (State Key Laboratory of Coordination Chemistry, Jiangsu Key Laboratory of Advanced Organic Materials, School of Chemistry) L Lim Chee Beng (Institute of Materials Research and Engineering (IMRE) Agency for Science Technology and Research (A*STAR) 2 Fusionopolis Way, Innovis 08‐03 Singapore 138634 Singapore) H Hui Kim Hui (Institute of Materials Research and Engineering (IMRE) Agency for Science Technology and Research (A*STAR) 2 Fusionopolis Way, Innovis 08‐03 Singapore 138634 Singapore) A Abdullah I. El‐Kholy (National Institute of Laser Enhanced Sciences (NILES) Cairo University Giza 12613 Egypt) B Bijun Tang (School of Materials Science and Engineering) T Teddy Salim A Ariando Ariando (Department of Physics, National University of Singapore 2 , Singapore 117542,) Z Zheng Liu E Elbert E. M. Chia K Ke Lin

Abstract

AbstractOxide interfaces have enormous potential for future electronics with many applications, such as large spin Hall conductance, phase transitions, topological states, and superconductivity. However, previous investigations have predominantly focused on gigahertz frequencies; whilst the possibilities to fabricate devices operational at terahertz frequencies are demonstrated. A model solution is proposed employing 5d rare‐earth, strontium iridate (SrIrO3) heterostructure with cobalt (Co) ultrathin layers. Femtosecond lasers are used to photoexcite the spins in Co, which super diffuse into the SrIrO3 layer to produce an ultrafast inverse spin Hall effect in sub‐picosecond timescales. The devices exploit the external magnetic field and laser fluence to control the spin polarization from the Co layer and demonstrate a tailored spin Hall effect. These results thus pave paths for next‐generation ultrafast oxide electronics offering possibilities for room temperature‐based devices.

Article Details

Volume / Issue Vol. 37, Issue 16
Published April 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (16)

A

Ali Abdelaziem

Z

Ziqi Li

G

Ganesh Ji Omar

Department of Physics Faculty of Science National University of Singapore 2 Science Drive 3, Blk S12 Singapore 117551 Singapore

L

Lisen Huang

Institute of Materials Research and Engineering (IMRE) Agency for Science Technology and Research (A*STAR) 2 Fusionopolis Way, Innovis 08‐03 Singapore 138634 Singapore

P

Piyush Agarwal

Institute of Materials Research and Engineering, Agency for Science, Technology and Research 2 , Fusionopolis Way 2, Singapore 138634,

Y

Yao Wu

School of Materials Science & Engineering

H

Hong Yan

State Key Laboratory of Coordination Chemistry, Jiangsu Key Laboratory of Advanced Organic Materials, School of Chemistry

L

Lim Chee Beng

Institute of Materials Research and Engineering (IMRE) Agency for Science Technology and Research (A*STAR) 2 Fusionopolis Way, Innovis 08‐03 Singapore 138634 Singapore

H

Hui Kim Hui

Institute of Materials Research and Engineering (IMRE) Agency for Science Technology and Research (A*STAR) 2 Fusionopolis Way, Innovis 08‐03 Singapore 138634 Singapore

A

Abdullah I. El‐Kholy

National Institute of Laser Enhanced Sciences (NILES) Cairo University Giza 12613 Egypt

B

Bijun Tang

School of Materials Science and Engineering

T

Teddy Salim

A

Ariando Ariando

Department of Physics, National University of Singapore 2 , Singapore 117542,

Z

Zheng Liu

E

Elbert E. M. Chia

K

Ke Lin