Temperature resolved spin-pumping in permalloy-bismuth selenide heterostructure

A A. S. Pakhomov (New Spintronic Technologies 1 , Moscow 121205,) P P. N. Skirdkov (New Spintronic Technologies 1 , Moscow 121205,) V V. V. Yurlov (New Spintronic Technologies 1 , Moscow 121205,) G G. A. Kichin (New Spintronic Technologies 1 , Moscow 121205,) N N. T. Hai (Department of Physics, National Changhua University of Education 4 , Changhua 500,) J J. C. Wu (Department of Physics, National Changhua University of Education 4 , Changhua 500,) J J. C. A. Huang (Department of Physics, National Cheng Kung University 5 , Tainan 701,) S S. H. Su (Department of Physics, National Cheng Kung University 5 , Tainan 701,) A A. I. Chernov (Moscow Center for Advanced Studies 2 , Moscow 123592,) K K. A. Zvezdin (New Spintronic Technologies 1 , Moscow 121205,)

Abstract

This study explores the temperature-dependent magnetization dynamics in permalloy-topological insulator heterostructures using temperature-resolved ferromagnetic resonance. NiFe/Bi2Se3 heterostructures are compared to NiFe/Pt and NiFe/W systems to identify unique damping behaviors. This work uncovers an unprecedented damping profile in NiFe/Bi2Se3 at temperatures below 90 K, shedding light on the interplay between spin current backflow and spin reorientation transitions, mechanisms previously unexplored in this context. Additionally, significant differences in inhomogeneous linewidth broadening (ΔH0) and effective magnetization (Meff) are observed, further emphasizing the distinct spin dynamics in NiFe/Bi2Se3 compared to heavy metal-based heterostructures. The findings reveal that topological insulators like Bi2Se3 play a critical role in modulating spin-pumping processes, particularly through the Rashba effect and spin–orbit coupling. These results offer deeper insight into the mechanisms underlying magnetic damping and provide a foundation for the optimization of spintronic memory and logic devices. The findings provide a critical foundation for designing advanced spintronic devices, particularly for low-temperature applications in spin–orbit torque magnetic random-access memory and magnonic systems.

Article Details

Volume / Issue Vol. 137, Issue 20
Published May 28, 2025
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (10)

A

A. S. Pakhomov

New Spintronic Technologies 1 , Moscow 121205,

P

P. N. Skirdkov

New Spintronic Technologies 1 , Moscow 121205,

V

V. V. Yurlov

New Spintronic Technologies 1 , Moscow 121205,

G

G. A. Kichin

New Spintronic Technologies 1 , Moscow 121205,

N

N. T. Hai

Department of Physics, National Changhua University of Education 4 , Changhua 500,

J

J. C. Wu

Department of Physics, National Changhua University of Education 4 , Changhua 500,

J

J. C. A. Huang

Department of Physics, National Cheng Kung University 5 , Tainan 701,

S

S. H. Su

Department of Physics, National Cheng Kung University 5 , Tainan 701,

A

A. I. Chernov

Moscow Center for Advanced Studies 2 , Moscow 123592,

K

K. A. Zvezdin

New Spintronic Technologies 1 , Moscow 121205,