Tailoring Altermagnetic Spin Splitting via Strain‐Induced Symmetry Reconstruction in CrSb Thin Films

W Wenting Lin Z Zhen‐Xiong Shen (Institute of Artificial Intelligence Hefei Comprehensive National Science Center Hefei 230088 China) X Xiaoqian Zhang (School of Physics) C Chao‐Kai Li (Key Laboratory of Quantum Materials and Devices of Ministry of Education School of Physics Southeast University Nanjing 211189 China) Q Quan Ren (Key Laboratory of Quantum Materials and Devices of Ministry of Education School of Physics Southeast University Nanjing 211189 China) S Shuo Wang H Huayao Li L Lulu Han X Xuezeng Lu (Key Laboratory of Quantum Materials and Devices of Ministry of Education School of Physics Southeast University Nanjing 211189 China) W Wei Niu S Si Zhang S Shixin Song (Key Laboratory of Quantum Materials and Devices of Ministry of Education School of Physics Southeast University Nanjing 211189 China) M Meng Zeng (Department of Physics State Key Laboratory of Quantum Functional Materials and Guangdong Basic Research Center of Excellence for Quantum Science Southern University of Science and Technology (SUSTech) Shenzhen 518055 China) Y Yi Liu Z Zhe Sun Z Zhengtai Liu (Shanghai Synchrotron Radiation Facility) M Mao Ye S Shan Qiao (State Key Laboratory of Medicinal Chemical Biology, College of Pharmacy) G Guang Bian (Department of Physics and Astronomy University of Missouri Columbia MO 65211 USA) C Chang Liu Y Yongbing Xu (National Key Laboratory of Spintronics, Nanjing University) L Lixin He (Institute of Artificial Intelligence, Hefei Comprehensive National Science Center 4 , Hefei 230026,) L Lin Miao

Abstract

Abstract Altermagnets represent a novel class of quantum magnets that emerge from specific crystal symmetry operations, particularly rotations or mirror reflections, exhibiting unique momentum‐dependent spin‐split band structures within the antiferromagnetic regime. The spin textures of altermagnets are fundamentally governed by spin group symmetry, offering unique opportunities for magnetic property control. However, experimentally tuning their spin‐splitting via symmetry engineering remains a key challenge. Here, interfacial strain in 10 nm CrSb thin films by molecular beam epitaxy (MBE) is engineered to systematically modify its crystal symmetry. Remarkably, high‐resolution spin‐ and angle‐resolved photoemission spectroscopy (spin‐ARPES) measurements revealed a transition to a spin‐degenerate ground state throughout the entire Brillouin zone, quantitatively demonstrating strain control over altermagnetic spin splitting. Although bulk altermagnetic theory anticipates spin‐splitting, thin films exhibit spin degeneracy instead, which this first‐principles calculations trace to interfacial strain‐mediated surface magnetic state stabilization. In CrSb thin films, strain‐induced magnetic reconstruction preserves PT symmetry (spatial inversion followed by time reversal), thereby enforces spin degeneracy across the Brillouin zone, as evidenced by the quantitative agreement between calculated spin/electronic structures and spin‐ARPES measurements. This strategy establishes a new paradigm for tailoring altermagnetic spin splitting through engineered symmetry, addressing a critical gap in spectroscopic investigations of altermagnetic systems.

Article Details

Volume / Issue Vol. 38, Issue 5
Published January 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (23)

W

Wenting Lin

Z

Zhen‐Xiong Shen

Institute of Artificial Intelligence Hefei Comprehensive National Science Center Hefei 230088 China

X

Xiaoqian Zhang

School of Physics

C

Chao‐Kai Li

Key Laboratory of Quantum Materials and Devices of Ministry of Education School of Physics Southeast University Nanjing 211189 China

Q

Quan Ren

Key Laboratory of Quantum Materials and Devices of Ministry of Education School of Physics Southeast University Nanjing 211189 China

S

Shuo Wang

H

Huayao Li

L

Lulu Han

X

Xuezeng Lu

Key Laboratory of Quantum Materials and Devices of Ministry of Education School of Physics Southeast University Nanjing 211189 China

W

Wei Niu

S

Si Zhang

S

Shixin Song

Key Laboratory of Quantum Materials and Devices of Ministry of Education School of Physics Southeast University Nanjing 211189 China

M

Meng Zeng

Department of Physics State Key Laboratory of Quantum Functional Materials and Guangdong Basic Research Center of Excellence for Quantum Science Southern University of Science and Technology (SUSTech) Shenzhen 518055 China

Y

Yi Liu

Z

Zhe Sun

Z

Zhengtai Liu

Shanghai Synchrotron Radiation Facility

M

Mao Ye

S

Shan Qiao

State Key Laboratory of Medicinal Chemical Biology, College of Pharmacy

G

Guang Bian

Department of Physics and Astronomy University of Missouri Columbia MO 65211 USA

C

Chang Liu

Y

Yongbing Xu

National Key Laboratory of Spintronics, Nanjing University

L

Lixin He

Institute of Artificial Intelligence, Hefei Comprehensive National Science Center 4 , Hefei 230026,

L

Lin Miao