Tailoring Altermagnetic Spin Splitting via Strain‐Induced Symmetry Reconstruction in CrSb Thin Films
Abstract
Abstract Altermagnets represent a novel class of quantum magnets that emerge from specific crystal symmetry operations, particularly rotations or mirror reflections, exhibiting unique momentum‐dependent spin‐split band structures within the antiferromagnetic regime. The spin textures of altermagnets are fundamentally governed by spin group symmetry, offering unique opportunities for magnetic property control. However, experimentally tuning their spin‐splitting via symmetry engineering remains a key challenge. Here, interfacial strain in 10 nm CrSb thin films by molecular beam epitaxy (MBE) is engineered to systematically modify its crystal symmetry. Remarkably, high‐resolution spin‐ and angle‐resolved photoemission spectroscopy (spin‐ARPES) measurements revealed a transition to a spin‐degenerate ground state throughout the entire Brillouin zone, quantitatively demonstrating strain control over altermagnetic spin splitting. Although bulk altermagnetic theory anticipates spin‐splitting, thin films exhibit spin degeneracy instead, which this first‐principles calculations trace to interfacial strain‐mediated surface magnetic state stabilization. In CrSb thin films, strain‐induced magnetic reconstruction preserves PT symmetry (spatial inversion followed by time reversal), thereby enforces spin degeneracy across the Brillouin zone, as evidenced by the quantitative agreement between calculated spin/electronic structures and spin‐ARPES measurements. This strategy establishes a new paradigm for tailoring altermagnetic spin splitting through engineered symmetry, addressing a critical gap in spectroscopic investigations of altermagnetic systems.
Article Details
Authors (23)
Wenting Lin
Zhen‐Xiong Shen
Institute of Artificial Intelligence Hefei Comprehensive National Science Center Hefei 230088 China
Xiaoqian Zhang
School of Physics
Chao‐Kai Li
Key Laboratory of Quantum Materials and Devices of Ministry of Education School of Physics Southeast University Nanjing 211189 China
Quan Ren
Key Laboratory of Quantum Materials and Devices of Ministry of Education School of Physics Southeast University Nanjing 211189 China
Shuo Wang
Huayao Li
Lulu Han
Xuezeng Lu
Key Laboratory of Quantum Materials and Devices of Ministry of Education School of Physics Southeast University Nanjing 211189 China
Wei Niu
Si Zhang
Shixin Song
Key Laboratory of Quantum Materials and Devices of Ministry of Education School of Physics Southeast University Nanjing 211189 China
Meng Zeng
Department of Physics State Key Laboratory of Quantum Functional Materials and Guangdong Basic Research Center of Excellence for Quantum Science Southern University of Science and Technology (SUSTech) Shenzhen 518055 China
Yi Liu
Zhe Sun
Zhengtai Liu
Shanghai Synchrotron Radiation Facility
Mao Ye
Shan Qiao
State Key Laboratory of Medicinal Chemical Biology, College of Pharmacy
Guang Bian
Department of Physics and Astronomy University of Missouri Columbia MO 65211 USA
Chang Liu
Yongbing Xu
National Key Laboratory of Spintronics, Nanjing University
Lixin He
Institute of Artificial Intelligence, Hefei Comprehensive National Science Center 4 , Hefei 230026,
Lin Miao