Synthesis, crystal structure, and physical properties of ThRuSn with a distorted kagome structure

Abstract

We report the synthesis and comprehensive analysis of a new ternary compound, ThRuSn, featuring a distorted kagome structure composed of Th atoms. The compound crystallizes in a ZrNiAl-type structure with lattice parameters a = b = 7.4599(6) Å and c = 4.1306(3) Å. It displays metallic behavior, low magnetoresistance, and paramagnetism, as evidenced by electrical resistivity and magnetic susceptibility measurements. Hall effect measurements reveal that the carrier type follows a single-band model and is predominantly characterized by hole type. The electronic coefficient, γe = 3.6 mJ K−2 mol−1, was derived from low-temperature specific heat. Furthermore, first-principle calculations suggest that the electron states near the Fermi energy are primarily influenced by the Ru and Th states. The electronic band structure exhibits Dirac-like crossings and van Hove singularities at the M and K points, suggestive of potential topological properties. This study contributes to the development of new material platforms at the forefront of ternary equiatomic intermetallic compounds and distorted kagome metal research.