Synthesis and photocatalytic activity of anatase TiO2 xerogels: Effect of atomic radius of copper, cobalt, and cadmium dopants

K Khadidja Grissi (Department of Physics, Faculty of Sciences, Université 20 Août 1955 1 , El-Hadaïk BP 26, Skikda 21000,) H Hichem Sedrati (Department of Physics, Faculty of Sciences, Université 20 Août 1955 1 , El-Hadaïk BP 26, Skikda 21000,) M Mohamed Cherif Benachour (Research Center in Industrial Technologies CRTI 4 , P.O.Box 64, Cheraga 16014, Algiers,) S Sabrina Halladja (Anticorrosion, Materials, Environment and Structure Research Laboratory, University20 Août 1955 3 , El-Hadaïk BP 26, Skikda 21000,) D Derradji Chebli (Département de génie des procédés, Laboratoire de génie des procédés chimiques, Faculté de Technologie, Université Ferhat Abbas 5 , Sétif-1, Sétif 19000,) R Rahima Zellagui (Research Center in Industrial Technologies CRTI 4 , P.O.Box 64, Cheraga 16014, Algiers,)

Abstract

This study investigates the influence of the atomic radii of copper, cobalt, and cadmium on the photocatalytic activity of anatase TiO2 xerogels synthesized via the solgel method. All samples were annealed at 550 °C for 20 min and crystallized into the pure anatase phase, as confirmed by XRD and Raman spectroscopy. Dopant incorporation into the TiO2 matrix reduced the grain size (from 24.01 to 9.78 nm) and decreased the bandgap energy (from 3.44 to 3.19 eV). Photocatalytic degradation of methylene blue (MB) revealed enhanced activity for doped samples, with degradation rates increasing from 71.65% for undoped TiO to 79.29%, 86.54%, and 94.13% for 2 at. % Cu-TiO2, 2 at. % Co-TiO2, and 2 at. % Cd-doped TiO2, respectively. Among the dopants, 2 at. % Cd-TiO2 exhibited the highest photocatalytic efficiency and the fastest degradation rate. Furthermore, the 2 at. % Cd-TiO2 sample demonstrated excellent stability, retaining more than 90% of its photocatalytic activity over six cycles with only a 4% loss in capacity.

Article Details

Volume / Issue Vol. 137, Issue 12
Published March 28, 2025
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (6)

K

Khadidja Grissi

Department of Physics, Faculty of Sciences, Université 20 Août 1955 1 , El-Hadaïk BP 26, Skikda 21000,

H

Hichem Sedrati

Department of Physics, Faculty of Sciences, Université 20 Août 1955 1 , El-Hadaïk BP 26, Skikda 21000,

M

Mohamed Cherif Benachour

Research Center in Industrial Technologies CRTI 4 , P.O.Box 64, Cheraga 16014, Algiers,

S

Sabrina Halladja

Anticorrosion, Materials, Environment and Structure Research Laboratory, University20 Août 1955 3 , El-Hadaïk BP 26, Skikda 21000,

D

Derradji Chebli

Département de génie des procédés, Laboratoire de génie des procédés chimiques, Faculté de Technologie, Université Ferhat Abbas 5 , Sétif-1, Sétif 19000,

R

Rahima Zellagui

Research Center in Industrial Technologies CRTI 4 , P.O.Box 64, Cheraga 16014, Algiers,