Synergistic Modulation of Triplet Density and Heavy‐Atom Effect Accelerates Reverse Intersystem Crossing for Narrowband Multi‐Resonance TADF Emitters
Abstract
ABSTRACT Combining rapid triplet‐to‐singlet spin conversion with BT.2020‐relevant color purity in a single purely organic emitter remains a major challenge for OLED development. Here, we report a synergistic strategy that couples increased triplet density with a modest heavy‐atom effect, in which an energetically matched sulfur‐containing fragment is fused into a multi‐resonance thermally activated delayed fluorescence (MR‐TADF) skeleton to accelerate reverse intersystem crossing (RISC) while preserving narrowband emission. The resulting emitter exhibits pure‐green emission at 514 nm with a full width at half‐maximum of 17 nm, together with an ultrafast RISC rate constant of 5.1 × 10 6 s −1 . Theoretical studies and control experiments jointly reveal a dense manifold of triplet states near S 1 and show that the sulfur atom enhances spin–orbit coupling between states of distinct electronic character, opening multiple efficient RISC pathways. Benefiting from these features, the corresponding non‐sensitized devices deliver a maximum external quantum efficiency (EQE) of 34.6% with minimal efficiency roll‐off (25.2% at 10 000 cd m −2 ) and Commission Internationale de l’Éclairage (CIE) coordinates of (0.20, 0.74), ranking among the best‐performing green devices with a binary emitting layer. These results demonstrate a general design principle for overcoming the trade‐off between ultrafast RISC and color purity in MR‐TADF systems.
Article Details
Authors (8)
Ming Yang
Jiahui Liu
Cheng Zhong
Xiaosong Cao
Shenzhen Key Laboratory of New Information Display and Storage Materials, College of Materials Science and Engineering
Zhanxiang Chen
Shenzhen Key Laboratory of New Information Display and Storage Materials, College of Materials Science and Engineering
Zhuixing Xue
Shenzhen Key Laboratory of New Information Display and Storage Materials College of Materials Science and Engineering Shenzhen University Shenzhen P. R. China
Zeyuan Ye
Chuluo Yang
Shenzhen Key Laboratory of New Information Display and Storage Materials, College of Materials Science and Engineering