Synergistic Bidirectional Crystallization for High‐Performance Perovskite Solar Cells

S Shuaijun Yan Q Qingqing Li W Wenbo Liu (Institute of Physics) P Pinghui Yang J Jiehui Li D Dongxu Jin (State Key Laboratory of Flexible Electronics (LOFE) Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies) Nanjing Tech University (Nanjing Tech) Nanjing Jiangsu China) T Tiansong Cao (State Key Laboratory of Flexible Electronics (LOFE) Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies) Nanjing Tech University (Nanjing Tech) Nanjing Jiangsu China) R Renzhi Li W Wei Huang J Jianpu Wang

Abstract

ABSTRACT Traditional n‐i‐p perovskite solar cells (PSCs) have achieved remarkable power conversion efficiencies exceeding 26%, yet their performance and stability remain critically bottlenecked by interfacial voids and detrimental trap states at the buried interface. These structural anomalies fundamentally originate from the conventional top‐down crystallization process, where a rapidly formed top crust induces a solvent blockade effect, trapping residual solvents that subsequently evaporate to leave detrimental buried voids. Here, we overcome this kinetic limitation via a synergistic bidirectional crystallization strategy, enabled by a dual‐functional molecular linker, diethyl phosphoramidate (DAPE). By strongly anchoring to the SnO 2 substrate and chemically bridging perovskite precursors, DAPE induces a synchronous bottom‐up growth front that complements the anti‐solvent‐induced top‐down crystallization. This kinetically reconstructed process maintains open solvent‐evasion channels, effectively eliminating the solvent blockade to yield a dense, void‐free interface. Consequently, the optimized devices exhibit relaxed residual stress and minimized non‐radiative recombination, achieving a champion power conversion efficiency of 26.25% with superior operational stability. Our work underscores the vital role of regulating crystallization kinetics to eliminate physical interfacial anomalies, offering useful insights for the further development of efficient n‐i‐p PSCs.

Article Details

Volume / Issue Vol. 1, Issue 1
Published August 17, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (10)

S

Shuaijun Yan

Q

Qingqing Li

W

Wenbo Liu

Institute of Physics

P

Pinghui Yang

J

Jiehui Li

D

Dongxu Jin

State Key Laboratory of Flexible Electronics (LOFE) Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies) Nanjing Tech University (Nanjing Tech) Nanjing Jiangsu China

T

Tiansong Cao

State Key Laboratory of Flexible Electronics (LOFE) Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies) Nanjing Tech University (Nanjing Tech) Nanjing Jiangsu China

R

Renzhi Li

W

Wei Huang

J

Jianpu Wang