Surface structure characterization of rubrene(001) single crystal with sum frequency generation spectroscopy and reflection high-energy electron diffraction

S S. A. Shah (Department of Chemistry, University of Houston 1 , Houston, Texas 77204,) H H. Vali (Department of Chemistry, University of Houston 1 , Houston, Texas 77204,) D Daijiro Okaue (Department of Materials Engineering Science, Graduate School of Engineering Science, Osaka University 2 , 1-3 Machikaneyama, Toyonaka, Osaka 560-8531,) K Ken-ichi Fukui (Department of Materials Engineering Science, Graduate School of Engineering Science, Osaka University 2 , 1-3 Machikaneyama, Toyonaka, Osaka 560-8531,) D D.-S. Yang (Department of Chemistry, University of Houston 1 , Houston, Texas 77204,) S S. Baldelli (Department of Chemistry, University of Houston 1 , Houston, Texas 77204,)

Abstract

Rubrene is one of the leading organic semiconductors in scientific and industrial research, showing good conductivities and utilities in devices such as organic field-effect transistors. In these applications, the rubrene crystals often contact ionic liquids and other materials. Consequently, their surface properties and interfacial interactions influence the device’s performance. Although rubrene has been extensively studied with multiple structure characterization techniques, a complete description of the structure of rubrene single-crystal surfaces at the molecular level remains elusive. This study elucidates the molecular orientation and arrangement on the surface of rubrene single crystals with sum frequency generation (SFG) spectroscopy and reflection high-energy electron diffraction, respectively. The results confirm the near-surface unit cells with in-plane lattice parameters of a = 7.24 Å and b = 14.3 Å and an out-of-plane constant of c = 26.9 Å. Furthermore, the SFG analysis yields the tilt and rotation angles of θ = 15° and φ = 43° with respect to the crystalline c and a axes, respectively, and an in-plane twist of ψ = 3° for the surface phenyl rings.

Article Details

Volume / Issue Vol. 162, Issue 1
Published January 07, 2025
ISSN 0021-9606
Publisher American Institute of Physics

Journal Info

The Journal of Chemical Physics

American Institute of Physics

ISSN: 0021-9606 Physical Sciences

Authors (6)

S

S. A. Shah

Department of Chemistry, University of Houston 1 , Houston, Texas 77204,

H

H. Vali

Department of Chemistry, University of Houston 1 , Houston, Texas 77204,

D

Daijiro Okaue

Department of Materials Engineering Science, Graduate School of Engineering Science, Osaka University 2 , 1-3 Machikaneyama, Toyonaka, Osaka 560-8531,

K

Ken-ichi Fukui

Department of Materials Engineering Science, Graduate School of Engineering Science, Osaka University 2 , 1-3 Machikaneyama, Toyonaka, Osaka 560-8531,

D

D.-S. Yang

Department of Chemistry, University of Houston 1 , Houston, Texas 77204,

S

S. Baldelli

Department of Chemistry, University of Houston 1 , Houston, Texas 77204,